Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 613-618

  Kim, C C ^a   Chen, Y P ^a   Sivananthan, S ^a   Tsen, S C Y ^b   Smith, David J ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Interface; MBE; Precursor; RDS; RHEED; X ray

Indexed keywords

COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

REFLECTIVITY DIFFERENCE SPECTROSCOPY (RDS); SEMICONDUCTING ZINC SELENIDE; X RAY DOUBLE CRYSTAL ROCKING CURVES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031144953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00999-2     Document Type: Article

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