An analytical model of the VBE-dependence of current-splitting in CMOS-compatible lateral bipolar transistors

Solid State Electronics

Volumn 38, Issue 8, 1995, Pages 1543-1546

  Freund, Dirk ^a,b   Kostka, Arno ^a,b  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b NONE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONFORMAL MAPPING; DIFFUSION; ELECTRIC SPACE CHARGE; ENERGY GAP; PERMITTIVITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CMOS COMPATIBLE LATERAL BIPOLAR TRANSISTORS; CURRENT SPLITTING RATIO; DEBYE LENGTH; LATE EFFECT; THERMAL VOLTAGE;

BIPOLAR TRANSISTORS;

EID: 0029357273     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00022-L     Document Type: Article

References (9)

1. MOS transistors operated in the lateral bipolar mode and their application in CMOS technology
2. Forward-voltage capacitance and thickness of p-n junction space-charge regions