Implementation of total dose constraints at the design level of full custom bipolar integrated circuits

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1998, Pages 126-132

  Deval, Y ^a   Fouillat, P ^a   Montagner, X ^a   Briand, R ^a   Touboul, A ^a   David, J P ^a   Bonora, L ^a   Calvet, M C ^a   Calvel, P ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; IONIZING RADIATION; LEAKAGE CURRENTS; LINEAR INTEGRATED CIRCUITS; MICROELECTRONIC PROCESSING; RADIATION EFFECTS;

ANALOG CIRCUITS; BASE CURRENT DEGRADATION; IONIZING RADIATION EFFECTS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0031619351     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)