An Improved Analytical Model for Collector Currents in Lateral Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 3, 1994, Pages 373-382

  Joardar, Kuntal ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL COMPLEXITY; ELECTRIC CURRENTS; ELECTRIC NETWORK PARAMETERS; ELECTRODES; GATES (TRANSISTOR); NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

COLLECTOR CURRENTS; HYBRID MODE OPERATION; LATERAL BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028399143     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.275223     Document Type: Article

References (15)

1. S. A. Parke, C. Hu, and P. K. Ko, “A high-performance lateral bipolar transistor fabricated on SIMOX,” IEEE Electron Device Lett., vol. 14, p. 33, 1993.
2. S. V. Vandebroek, S. S. Wong, J. C. S. Woo, and Ping K. Ko, “High-gain lateral bipolar action in a MOSFET structure,” IEEE Trans. Electron Devices, vol. 38, p. 2487, 1991.
3. S. V. Vandebroek, J. You, J. C. S. Woo, and S. S. Wong, “High-gain lateral p-n-p bipolar action in a p-MOSFET structure,” IEEE Electron Device Lett., vol. 13, p. 312, 1992.
4. G. V. Ram and M. S. Tyagi, “A simple analytical model for estimating DC a of lateral p-n-p transistors,” IEEE Trans. Electron Devices, vol. ED-25, p. 62, 1978.
5. K. S. Seo and C. K. Kim, “On the geometrical factor of lateral p-n-p transistors,” IEEE Trans. Electron Devices, vol. ED-27, p. 295, 1980.
6. A. A. Eltoukhy and D. J. Roulston, “A complete analytic model for the base and collector currents in lateral p-n-p transistors,” Solid State Electron., vol. 27, p. 69, 1984.
7. D. E. Fulkerson, “A two-dimensional model for the calculation of common-emitter current gains of lateral p-n-p transistors,” Solid State Electron, vol. 11, p. 821, 1968.
8. S. Chou, “An investigation of lateral transistors—dc characteristics,” Solid State Electron., vol. 14, p. 811, 1971.
9. D. Seitz and I. Kidran, “A two-dimensional model for the lateral p-n-p transistors,” IEEE Trans. Electron Devices, vol. ED-21, p. 587, 1974.
10. F. G. O’Hara, J. J. H. van den Biesen, H. C. de Graff, W. J. Kloosterman, and J. B. Foley, “MODELLA—A new physics-based compact model for lateral p-n-p transistors,” IEEE Trans. Electron Devices, vol. 39, p. 2553, 1992.
11. K. K. Au, P. G. Y. Tsui, Y. S. Kim, K. K. Diogu, M. L. Kosty, and C. M. Palmer, “Field-plated high gain lateral bipolar transistor in standard CMOS process for BiNMOS applications,” in Proc. IEEE Custom Integrated Circuits Conf., p. 18.5.1, 1991.
12. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
13. K. Joardar, “An improved model for collector currents in lateral p-n-p transistors,” in IEEE Bipolar Circuits and Tech. Meet., p. 154, 1991.
14. M. R. Pinto, C. S. Rafferty, H. R. Yeager, and R. W. Dutton, “PISCES-IIB supplementary report,” Stanford Univ., Stanford, CA, 1985.
15. I. Getreu, “Modeling the Bipolar Transistor,” Tektronix Inc., Beaverton, OR, 1976.