A new field-effect transistor with selectively doped GaAs/n-AlxGa1−xAs heterojunctions

Japanese Journal of Applied Physics

Volumn 19, Issue 5, 1980, Pages L225-L227

  Mimura, Takashi ^a   Hiyamizu, Satoshi ^a   Fujii, Toshio ^a   Nanbu, Kazuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84951490594     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.19.L225     Document Type: Article

References (5)

1. R. Dingle, H. L. Störmer, A. C. Gossard and W. Wiegmann: Appl. Phys. Lett. 33 (1978) 655.
2. H. Kröemer and W. Y. Chien: IEEE Trans. Electron Devices ED-26 (1979) 1839.
3. H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegmann and M. D. Sturge: Solid State Commun. 29 (1979) 705.
4. W. Shockley: Proc. IRE 40 (1952) 1365.
5. S. Mori and T. Ando: Proc. Yamada Conf. II, LAKE YAMANAKA, 1979, p. 44.