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Volumn 34, Issue 2, 1998, Pages 223-234

Quantum-dot Lasers Fabricated with Self-assembled Microcrystals

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

EID: 0032299531     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (43)
  • 1
    • 84929467478 scopus 로고
    • Zero-Dimensional Excitons in Semiconductor Clusters
    • L. Brus: Zero-Dimensional Excitons in Semiconductor Clusters. IEEE J. Quantum Electron, QE-22, pp. 1909-1914 (1986).
    • (1986) IEEE J. Quantum Electron , vol.QE-22 , pp. 1909-1914
    • Brus, L.1
  • 2
    • 84973016707 scopus 로고
    • Mechanism for enhanced optical nonlinearities and bistability by combined dielectric-electronic confinement in semiconductor microcrystallites
    • D. S. Chemla and D. A. B. Miller: Mechanism for enhanced optical nonlinearities and bistability by combined dielectric-electronic confinement in semiconductor microcrystallites. Opt. Lett., 11, pp.522-524 (1986).
    • (1986) Opt. Lett. , vol.11 , pp. 522-524
    • Chemla, D.S.1    Miller, D.A.B.2
  • 3
    • 21544475375 scopus 로고
    • Multidimensional quantum well laser and temperature dependence of its threshold current
    • Y. Arakawa and H. Sakaki: Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett., 40, 11, pp.939-941 (1982).
    • (1982) Appl. Phys. Lett. , vol.40 , Issue.11 , pp. 939-941
    • Arakawa, Y.1    Sakaki, H.2
  • 4
    • 84892274867 scopus 로고
    • Gain and the Threshold of Three-Dimensional Quantum-Box Lasers
    • M. Asada, Y. Miyamoto, and Y. Suematsu: Gain and the Threshold of Three-Dimensional Quantum-Box Lasers. IEEE J. Quantum Electron., QE-22, pp.1915-1921 (1986).
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1915-1921
    • Asada, M.1    Miyamoto, Y.2    Suematsu, Y.3
  • 5
    • 0024605893 scopus 로고
    • Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors
    • H. Sakaki: Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors. Jpn. J. Appl. Phys. 28, pp.L314-L316 (1989).
    • (1989) Jpn. J. Appl. Phys. , vol.28
    • Sakaki, H.1
  • 6
    • 0023982181 scopus 로고
    • Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain
    • K. J. Vahala: Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain. IEEE J. Quantum Electron., 24, pp.523-530 (1988).
    • (1988) IEEE J. Quantum Electron. , vol.24 , pp. 523-530
    • Vahala, K.J.1
  • 9
    • 21544454347 scopus 로고
    • GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
    • T. Fukui, S. Ando, Y. Tokura, and T. Toriyama: GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition. Appl. Phys. Lett., 58, pp.2018-2020 (1991).
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 2018-2020
    • Fukui, T.1    Ando, S.2    Tokura, Y.3    Toriyama, T.4
  • 10
    • 0028196262 scopus 로고
    • Lasing action of GaInAs/GaInAsP/InP tensile-strained quantum-box lasers
    • H. Hirayama, K. Matsunaga, M. Asada, and Y. Suematsu: Lasing action of GaInAs/GaInAsP/InP tensile-strained quantum-box lasers. Electron. Lett., 30, pp.142-143 (1994).
    • (1994) Electron. Lett. , vol.30 , pp. 142-143
    • Hirayama, H.1    Matsunaga, K.2    Asada, M.3    Suematsu, Y.4
  • 12
    • 21544478900 scopus 로고
    • Quantum size effects on photoluminescence in ultrafine Si particles
    • H. Takagi, H. Ogawa, Y. Yamazaki, A. Ishizaki, and T. Nakagiri: Quantum size effects on photoluminescence in ultrafine Si particles. Appl. Phys. Lett., 56, pp.2379-2380 (1990).
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 2379-2380
    • Takagi, H.1    Ogawa, H.2    Yamazaki, Y.3    Ishizaki, A.4    Nakagiri, T.5
  • 13
    • 36448998842 scopus 로고
    • Photoluminescence and electroluminescence of SiGe dots fabricated by island growth
    • R. Apetz, L. Vescan, A. Hartmann, C. Dieker, and H. Lüth: Photoluminescence and electroluminescence of SiGe dots fabricated by island growth. Appl. Phys. Lett., 66, pp.445-447 (1995).
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 445-447
    • Apetz, R.1    Vescan, L.2    Hartmann, A.3    Dieker, C.4    Lüth, H.5
  • 15
    • 0005985335 scopus 로고
    • Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
    • D. Leonard, M. Kishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff: Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces. Appl. Phys. Lett., 63, 23, pp.3203-3205 (1993).
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.23 , pp. 3203-3205
    • Leonard, D.1    Kishnamurthy, M.2    Reaves, C.M.3    Denbaars, S.P.4    Petroff, P.M.5
  • 16
    • 0028461636 scopus 로고
    • Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-300 nm diameter) self-organized on GaAs (311)B sub-strates
    • R. Nötzel, J. Temmyo, H. Kamada, T. Furuta, and T. Tamamura: Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-300 nm diameter) self-organized on GaAs (311)B sub-strates. Appl. Phys. Lett., 65, 4, pp.457-459 (1994).
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.4 , pp. 457-459
    • Nötzel, R.1    Temmyo, J.2    Kamada, H.3    Furuta, T.4    Tamamura, T.5
  • 17
    • 21544448020 scopus 로고
    • Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
    • J. Oshinowo, M. Nishioka, S. Ishida, and Y. Arakawa: Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition. Appl. Phys. Lett., 65, 11, pp.1421-1423 (1994).
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.11 , pp. 1421-1423
    • Oshinowo, J.1    Nishioka, M.2    Ishida, S.3    Arakawa, Y.4
  • 21
    • 5444267048 scopus 로고    scopus 로고
    • Photoluinescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures
    • E. R. Glaser, B. R. Benett, B. V. Shanabrook, and R. Magno: Photoluinescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures. Appl. Phys. Lett., 68, pp.3614-3616 (1996).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 3614-3616
    • Glaser, E.R.1    Benett, B.R.2    Shanabrook, B.V.3    Magno, R.4
  • 22
    • 0001038253 scopus 로고    scopus 로고
    • Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski-Krastanow growth mode
    • H. C. Ko, D. C. Park, Y. Kawakami, S. Fujita, and S. Fujita: Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski-Krastanow growth mode. Appl. Phys. Lett. 70, pp.3278-3280 (1997).
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 3278-3280
    • Ko, H.C.1    Park, D.C.2    Kawakami, Y.3    Fujita, S.4    Fujita, S.5
  • 27
    • 0030259955 scopus 로고    scopus 로고
    • Room Temperature CW Operation at the Ground State of Self-Formed Quantum Dot Lasers with Multi-Stacked Dot Layer
    • H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa: Room Temperature CW Operation at The Ground State of Self-Formed Quantum Dot Lasers with Multi-Stacked Dot Layer. Electron. Lett., 32, pp.2023-2024 (1996).
    • (1996) Electron. Lett. , vol.32 , pp. 2023-2024
    • Shoji, H.1    Nakata, Y.2    Mukai, K.3    Sugiyama, Y.4    Sugawara, M.5    Yokoyama, N.6    Ishikawa, H.7
  • 28
    • 0031558192 scopus 로고    scopus 로고
    • Room-temperature continuous-wave lasing from stacked InAs/ GaAs quantum dots by metalorganic chemical vapor deposition
    • F. Heinrichsdorff, M.-H. Mao., N. Kirstaedter, A. Krost, and D. Bimberg: Room-temperature continuous-wave lasing from stacked InAs/ GaAs quantum dots by metalorganic chemical vapor deposition. Appl. Phys. Lett., 71, pp.22-24 (1997).
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 22-24
    • Heinrichsdorff, F.1    Mao, M.-H.2    Kirstaedter, N.3    Krost, A.4    Bimberg, D.5
  • 30
    • 0039874856 scopus 로고
    • 1 superlattice quantum well structures on GaAs by atomic layer epitaxy using trimethylindium-dimethylethylamine adduct
    • 1 superlattice quantum well structures on GaAs by atomic layer epitaxy using trimethylindium-dimethylethylamine adduct. Mat. Res. Soc. Symp. Proc., 334, pp.225-229 (1994).
    • (1994) Mat. Res. Soc. Symp. Proc. , vol.334 , pp. 225-229
    • Ohtsuka, N.1    Ueda, O.2
  • 31
    • 0030086826 scopus 로고    scopus 로고
    • Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
    • K. Mukai, N. Ohtsuka, and M. Sugawara: Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique. Jpn. J. Appl. Phys., 35, pp.L262-L265 (1996).
    • (1996) Jpn. J. Appl. Phys. , vol.35
    • Mukai, K.1    Ohtsuka, N.2    Sugawara, M.3
  • 32
    • 0027702691 scopus 로고
    • 1-xAs on GaAs(001): The role of surface diffusion length
    • 1-xAs on GaAs(001): the role of surface diffusion length. J. Cryst. Growth, 134, pp.51-62 (1993).
    • (1993) J. Cryst. Growth , vol.134 , pp. 51-62
    • Grandjean, N.1    Massies, J.2
  • 33
    • 0025210897 scopus 로고
    • In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopy
    • J. Osaka, N. Inoue, Y. Mada, K. Yamada and K. Wada: In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopy. J. Cryst. Growth, 99, pp.120-123 (1990).
    • (1990) J. Cryst. Growth , vol.99 , pp. 120-123
    • Osaka, J.1    Inoue, N.2    Mada, Y.3    Yamada, K.4    Wada, K.5
  • 34
    • 33744663818 scopus 로고
    • Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices
    • P. Boguslawski and A. Baldereschi: Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices. Phys. Rev. B, 39, pp.8055-8058 (1989).
    • (1989) Phys. Rev. B , vol.39 , pp. 8055-8058
    • Boguslawski, P.1    Baldereschi, A.2
  • 35
    • 0027593989 scopus 로고
    • Arsenic desorption from the InAs(001) growth surface during atomic layer epitaxy
    • Y. Sakuma, M. Ozeki, and K. Nakajima: Arsenic desorption from the InAs(001) growth surface during atomic layer epitaxy. J. of Cryst. Growth, 130, pp. 147-152 (1993).
    • (1993) J. of Cryst. Growth , vol.130 , pp. 147-152
    • Sakuma, Y.1    Ozeki, M.2    Nakajima, K.3
  • 37
    • 0031140982 scopus 로고    scopus 로고
    • Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy
    • Y. Nakata, Y. Sugiyama, T. Futatsugi, and N. Yokoyama: Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy. J. Crystal Growth, 175/176, pp.713-719 (1997).
    • (1997) J. Crystal Growth , vol.175-176 , pp. 713-719
    • Nakata, Y.1    Sugiyama, Y.2    Futatsugi, T.3    Yokoyama, N.4
  • 38
    • 0030080143 scopus 로고    scopus 로고
    • Stacked InAs self-assembled quantum dots on (001) GaAs grown by molecular beam epitaxy
    • Y. Sugiyama, Y. Nakata, K. Imamura, S. Muto, and N. Yokoyama: Stacked InAs self-assembled quantum dots on (001) GaAs grown by molecular beam epitaxy. Jpn. J. Appl. Phys., 35, pp.1320-1324 (1996).
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1320-1324
    • Sugiyama, Y.1    Nakata, Y.2    Imamura, K.3    Muto, S.4    Yokoyama, N.5
  • 39
    • 0000124319 scopus 로고    scopus 로고
    • Exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots
    • M. Sugawara, Y. Nakata, K. Mukai, and H. Shoji: Exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots. Phys. Rev. B, 55, pp.13155-13160 (1997).
    • (1997) Phys. Rev. B , vol.55 , pp. 13155-13160
    • Sugawara, M.1    Nakata, Y.2    Mukai, K.3    Shoji, H.4
  • 43
    • 0032490759 scopus 로고    scopus 로고
    • Lasing with low threshold current and high output power from colummar-shaped InAs/ GaAs quantum dots
    • K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Ohtsubo, N. Yokoyama, and H. Ishikawa: Lasing with low threshold current and high output power from colummar-shaped InAs/ GaAs quantum dots. Electron. Lett., 34, pp. 1588-1590 (1998).
    • (1998) Electron. Lett. , vol.34 , pp. 1588-1590
    • Mukai, K.1    Nakata, Y.2    Shoji, H.3    Sugawara, M.4    Ohtsubo, K.5    Yokoyama, N.6    Ishikawa, H.7


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