Plasma chemistry dependent ECR etching of GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 751-756

  Shul, R J ^a   Ashby, C I H ^a   Rieger, D J ^a   Howard, A J ^a   Pearton, S J ^a   Abernathy, C R ^a   Vartuli, C B ^a   Barnes, P A ^a   Davis, P ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; STOICHIOMETRY; SULFUR COMPOUNDS; SURFACES;

GALLIUM NITRIDE; PLASMA CHEMISTRY; SULFUR HEXAFLUORIDE;

PLASMA ETCHING;

EID: 0029726347     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)