Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of < 500 A/cm2

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1052-1054

  Qian, Y ^e   Zhu, Z H ^d   Lo, Y H ^e   Huffaker, D L ^a   Deppe, D G ^a   Hou, H Q ^b   Hammons, B E ^b   Lin, W ^c   Tu, Y K ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b The University of Texas at Austin   (United States)

^c CHUNGHWA TELECOM CO LTD   (Taiwan)

^d ZHEJIANG UNIVERSITY   (China)

^e NONE

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT DENSITY; ION IMPLANTATION; MIRRORS; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031554351     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970679     Document Type: Article

References (5)

1. BABIC, D.I., STREUBEL, K., MIRIN, R.P., MARGALIT, N.M., BOWERS, J.E., HU, E.L., MARS, D.E., YANG, L., and CAREY, K.: 'Room-temperature continuous-wave operation of 1.54μm vertical cavity lasers', IEEE Photonics Technol. Lett., 1995, 7, (11), pp. 1225-1227
2. MARGALIT, N.M., BABIC, D.I., STREUBEL, K., MIRIN, R.P., NAONE, R.L., BOWERS, J.E., and HU, E.L.: 'Submilliamp long wavelength vertical cavity lasers', Electron. Lett., 1996, 32, (18), pp. 1675-1677
3. QIAN, Y., ZHU, Z.H., LO, Y.H., HOU, H.Q., WANG, M.C., and LIN, W.: '1.3μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors', IEEE Photonics Technol. Lett., 1997, 9, (1), pp. 8-10
4. QIAN, Y., ZHU, Z.H., LO, Y.H., HUFFAKER, D.L., DEPPE, D.G., HOU, H.Q., HAMMONS, B.E., LIN, W., and TU, Y.K.: 'Low threshold proton implanted 1.3μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs/AlAs Bragg mirrors', to be published in IEEE Photonics Technol. Lett., 1997
5. QIAN, Y., ZHU, Z.H., LO, Y.H., HOU, H.Q., HAMMONS, B.E., HUFFAKER, D.L., DEPPE, D.G., LIN, W., and TU, Y.K.: 'Low threshold room temperature cw 1.3 μm single-bonded vertical-cavity surface-emitting lasers using oxygen-implanted confinement'. Tech. Dig. OFC'97, 1997, (Postdeadline paper PD14)