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Volumn , Issue , 1997, Pages 245-249
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AC charge centroid model for quantization of inversion layer in n-MOSFET
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CAPACITORS;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
PARTIAL DIFFERENTIAL EQUATIONS;
SEMICONDUCTOR DEVICE MODELS;
STATISTICAL METHODS;
FERMI DIRAC STATISTICS;
POISSON EQUATION;
SCHRODINGER EQUATION;
MOSFET DEVICES;
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EID: 0030702636
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (14)
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References (7)
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