Quantum mechanical modeling of the charge distribution in a Si/Si1-xGex/Si P-channel MOSFET

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 735-738

  Hargrove, Michael J ^a   Henning, Albert K ^a   Slinkman, James A ^a   Bean, John C ^a  

^a DARTMOUTH COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTATIONAL METHODS; ELECTRON TRANSPORT PROPERTIES; QUANTUM THEORY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

ALLOY CHANNEL LAYER; CARRIER MOBILITY; P CHANNEL MOSFET; SCHRODINGER POISSON EQUATIONS;

MOSFET DEVICES;

EID: 0028752982     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)