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Volumn , Issue pt A, 1981, Pages 1-120

PHYSICS OF THE MOS TRANSISTOR.

(1)  Brews, John R a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON SAPPHIRE TECHNOLOGY;

EID: 0019716738     PISSN: 00665533     EISSN: None     Source Type: Journal    
DOI: 10.1016/b978-0-12-002954-9.50006-3     Document Type: Article
Times cited : (47)

References (85)
  • 3
    • 85112924600 scopus 로고    scopus 로고
    • E. H. Nicollian and J. R. Brews, “MOS Physics and Technology.” Wiley, New York (to be published).
  • 6
    • 85112940892 scopus 로고
    • S.R. Hofstein J.T. Wallmark H. Johnson “Field-Effect Transistors: Physics, Technology and Applications” 1966 Prentice-Hall Englewood Cliffs, New Jersey 113 159
    • (1966) , pp. 113-159
    • Hofstein, S.R.1
  • 15
    • 85112906384 scopus 로고
    • A.S. Grove “Physics and Technology of Semiconductor Devices,” 1967 Wiley New York 171 Eq. (6.39)
    • (1967) , pp. 171
    • Grove, A.S.1
  • 18
    • 85112937866 scopus 로고
    • P. Richman “MOSFETs and Integrated Circuits.” 1973 Wiley New York
    • (1973)
    • Richman, P.1
  • 37
    • 85112918413 scopus 로고    scopus 로고
    • H. C. Poon and R. L. Johnston, unpublished technical memorandum, Bell Laboratories, Murray Hill, New Jersey, (1973); Proc. Asilomar Conf., Circuits, Syst. & Comput., 8th 1974 (1975).
  • 55
    • 85112892825 scopus 로고
    • W. Fawcett “Electrons in Crystalline Solids,” 1972 Int. Cent. Theor. Phys. Trieste 531 618
    • (1972) , pp. 531-618
    • Fawcett, W.1
  • 73
    • 85112926626 scopus 로고    scopus 로고
    • J. Matsunaga, M. Konaka, S. Kohyama, and H. Iizuku, Proc. Int. Conf. Solid-State Devices, 11th 1979 p. 45 (1979).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.