Mobility simulation in Si/SiGe heterostructure FETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 731-734

  Abramo, A ^a   Bude, J ^a   Venturi, F ^a   Pinto, M R ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; PHONONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY; VECTORS;

EFFECTIVE ELECTRON MOBILITY; POISSON EQUATIONS; SCHRODINGER EQUATIONS;

FIELD EFFECT TRANSISTORS;

EID: 0028736418     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)