InP-based 1.5μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

Electronics Letters

Volumn 34, Issue 13, 1998, Pages 1316-1318

  Gebretsadik, H ^a   Bhattacharya, P K ^a   Kamath, K K ^a,c   Qasaimeh, O R ^a   Klotzkin, D J ^a   Caneau, C ^b   Bhat, R ^b  

^a University of Michigan   (United States)

^b Corning Inc ^*  (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; LASER PULSES; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032091503     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980919     Document Type: Article

References (8)

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