Fabrication of 1.55 μm oxidized VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 369-372

  Starck, C ^a   Plais, A ^a   Derouin, E ^a   Pinquier, A ^a   Gaborit, F ^a   Fortin, C ^a   Goldstein, L ^a   Boucart, J ^a   Salet, P ^a   Carpentier, D ^a   Jacquet, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; MIRRORS; MOLECULAR BEAM EPITAXY; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

GALLIUM ALUMINUM ARSENIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM GALLIUM ARSENIC PHOSPHIDE; SELECTIVE WET OXIDATION; VERTICAL CAVITY SURFACE EMITTING LASER;

QUANTUM WELL LASERS;

EID: 0032300229     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)