Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3μm vertical-cavity lasers

Electronics Letters

Volumn 33, Issue 13, 1997, Pages 1145-1147

  Salet, P ^a   Pagnod Rossiaux, Ph ^a   Gaborit, F ^a   Plais, A ^a   Jacquet, J ^a  

^a NONE

Author keywords

Molecular beam epitaxial growth; Vertical cavity surface emitting lasers

Indexed keywords

GOLD; LIGHT REFLECTION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PLATINUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); MULTILAYER BRAGG MIRRORS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031166743     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970762     Document Type: Article

References (3)

1. BABA, T., SUZUKI, K., YOGO, Y., IGA, K., and KOYAMA, F.: 'Threshold reduction of 1.3-μm GaInAsP/InP surface-emitting laser by a maskless circular planar buried heterostructure regrowth', Electron. Lett., 1993, 29, pp. 331-332
2. BARDINAL, V., LEGROS, R., and FONTAINE, C.: 'Precision Bragg reflectors obtained by molecular beam epitaxy under in situ tunable dynamic reflectometry control', Appl. Phys. Lett., 1995, 67, pp. 3390-3392
3. 1-y layers and InP in the transparent wavelength region', J. Appl. Phys., 1984, 55, pp. 3376-3381