Fluorine implantation of atomic layer epitaxy grown In2O3 films

Journal of the Electrochemical Society

Volumn 144, Issue 6, 1997, Pages

  Asikainen, Timo ^a,b   Ritala, Mikko ^a   Li, Wei Min ^a   Lappalainen, Reijo ^a   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b Microchemistry Limited   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; FLUORINE; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ATOMIC LAYER EPITAXY; HALL MOBILITY; NUCLEAR RESONANCE BROADENING METHOD;

SEMICONDUCTING FILMS;

EID: 0031165531     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837703     Document Type: Article

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