-
1
-
-
0009112541
-
8 watt high efficiency x-band power amplifier using AlGaAs/GaAs HFET technology
-
S. Cooper et al "8 Watt High Efficiency X-Band Power Amplifier Using AlGaAs/GaAs HFET Technology" 1992, GaAs IC Symposium, pp. 183-185.
-
(1992)
GaAs IC Symposium
, pp. 183-185
-
-
Cooper, S.1
-
2
-
-
0028056696
-
High efficient C-band 27 watt internally-matched GaAs FETfor space application
-
M. Kohno et al, "High Efficient C-Band 27 watt Internally-Matched GaAs FETfor Space Application", 1994, IEEE MTT-S Digest, pp. 273-276.
-
(1994)
IEEE MTT-S Digest
, pp. 273-276
-
-
Kohno, M.1
-
3
-
-
0027969721
-
High efficiency 40 watt Ps HEMT S-band MIC power amplifiers
-
S. Bouthillette et al. "High Efficiency 40 watt Ps HEMT S-Band MIC Power Amplifiers", 1994, IEEE MTT-S Digest, pp. 667-670.
-
(1994)
IEEE MTT-S Digest
, pp. 667-670
-
-
Bouthillette, S.1
-
4
-
-
0028044432
-
Power P-HEMT module delivers 4 watts, 38 % P.A.E. over the 18.0 to 21.2 GHz band
-
B. Kraemer et al "Power P-HEMT Module Delivers 4 Watts, 38 % P.A.E. Over the 18.0 To 21.2 GHz Band", 1994, IEEE MTT-S Digest, pp. 801-803.
-
(1994)
IEEE MTT-S Digest
, pp. 801-803
-
-
Kraemer, B.1
-
5
-
-
0021292570
-
High-power microwave amplification with InP MISFETs
-
M. Armant et al, "High-Power Microwave Amplification with InP MISFETs", 1984, IEEE Cornell Conf. Ithaca, pp. 218-225.
-
(1984)
IEEE Cornell Conf. Ithaca
, pp. 218-225
-
-
Armant, M.1
-
8
-
-
0027962067
-
1.5 watts V-band power amplifier using P HEMT technology
-
L. Marosi et al, "1.5 Watts V-Band Power amplifier Using P HEMT Technology", 1994, IEEE MTT-S Digest, pp. 653-656.
-
(1994)
IEEE MTT-S Digest
, pp. 653-656
-
-
Marosi, L.1
-
9
-
-
0025448971
-
Modeling and experimental study of breakdown mechanisms in multichannel AlGaAs/GaAs power HEMTs
-
F. Temcamani, Y. Crosnier, D. Lippens, G. Salmer, "Modeling and Experimental Study of Breakdown Mechanisms in Multichannel AlGaAs/GaAs Power HEMTs", 1990, M.O.T.L., pp. 195-199.
-
(1990)
M.O.T.L.
, pp. 195-199
-
-
Temcamani, F.1
Crosnier, Y.2
Lippens, D.3
Salmer, G.4
-
10
-
-
0027558843
-
Dependence of ionization current on gate bias in GaAs MESFETs
-
C. Canali et al, "Dependence of Ionization Current on Gate Bias in GaAs MESFETs", 1993, IEEE E.D., pp. 498-500.
-
(1993)
IEEE E.D.
, pp. 498-500
-
-
Canali, C.1
-
11
-
-
0020706514
-
Theoretical analysis of the DC avalanche breakdown in GaAs MESFET
-
R. Wroblewski, G. Salmer, Y. Crosnier "Theoretical Analysis of the DC avalanche Breakdown in GaAs MESFET" 1983, IEEE E.D., pp. 154-159.
-
(1983)
IEEE E.D.
, pp. 154-159
-
-
Wroblewski, R.1
Salmer, G.2
Crosnier, Y.3
-
12
-
-
0024663656
-
A new approach to the RF power operation of MESFETs
-
G. Halkias, H. Gerard, Y. Crosnier, G. Salmer, 'A New Approach to the RF Power Operation ofMESFETs", 1989, IEEE MTT, pp. 817-825.
-
(1989)
IEEE MTT
, pp. 817-825
-
-
Halkias, G.1
Gerard, H.2
Crosnier, Y.3
Salmer, G.4
-
13
-
-
0028428385
-
1 W/mm power pseudomorphic HFET with optimised recess technology
-
C. Gaquiere, D. Theron, B. Bonte, Y. Crosnier, "1 W/mm power pseudomorphic HFET with optimised recess technology", 1994, Electronics Letters, pp. 904-906.
-
(1994)
Electronics Letters
, pp. 904-906
-
-
Gaquiere, C.1
Theron, D.2
Bonte, B.3
Crosnier, Y.4
-
14
-
-
85063325762
-
Breakdown Analysis of an Asymmetrical Double Recessed Power MESFET
-
C. Gaquiere, B. Bonte, D. Theron, Y. Crosnier, P. Arsene-Henri and T. Pacou, "Breakdown Analysis of an Asymmetrical Double Recessed Power MESFET", 1994, under submission to IEEE E.D.
-
(1994)
Under Submission to IEEE E.D
-
-
Gaquiere, C.1
Bonte, B.2
Theron, D.3
Crosnier, Y.4
Arsene-Henri, P.5
Pacou, T.6
-
15
-
-
0027656295
-
A double-recessed AlGaAs/lInGaAs pseudomorphic HEMTfor Ka-and-Q-band power applications
-
J.C. Huang et al, "A Double-Recessed AlGaAs/lInGaAs Pseudomorphic HEMTfor Ka-and-QBand Power Applications", 1993, IEEE E.D.L., pp. 456-458.
-
(1993)
IEEE E.D.L.
, pp. 456-458
-
-
Huang, J.C.1
-
16
-
-
0027206750
-
Physics of breakdown in InAlAs/n+ InGaAs heterostructure field-effect transistors
-
S.R. Bahl, J.A. del Alamo, "Physics of breakdown in InAlAs/n+ InGaAs Heterostructure Field-Effect Transistors", 1992, InP and Rel. Comp. Conf., pp. 243-246.
-
(1992)
InP and Rel. Comp. Conf.
, pp. 243-246
-
-
Bahl, S.R.1
Del Alamo, J.A.2
-
17
-
-
0028257322
-
Al0.251n0 75P/Al048In052As/Ga035In0. 6SAs graded channel pseudomorphic HEMT's with high channel-breakdown voltage
-
K.B. Chough, C. Caneau, W.P Hong, J.I. Song, "Al0.251n0 75P/Al048In052As/Ga0351nO. 6SAs Graded Channel Pseudomorphic HEMT's with High Channel-Breakdown Voltage", 1994, IEEE E.D.L., pp. 33-35.
-
(1994)
IEEE E.D.L.
, pp. 33-35
-
-
Chough, K.B.1
Caneau, C.2
Hong, W.P.3
Song, J.I.4
-
18
-
-
0027858029
-
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's
-
M. Matloubian et al., "V-Band High-Efficiency High-Power AlUnAs/GaInAs/InP HEMT's", 1993, IEEE M.T.T., pp. 2206-2209.
-
(1993)
IEEE M.T.T.
, pp. 2206-2209
-
-
Matloubian, M.1
-
19
-
-
0027230665
-
Microwave performance of 0.4 pm gate metamorphic In02Al0 71As/1n03Ga0 7As HEMT on GaAs substrate
-
P. Win et al., "Microwave performance of 0.4 pm gate metamorphic In02Al0 71As/1n03Ga0 7As HEMT on GaAs substrate ", 1993, Electronics Lett., pp. 169-170.
-
(1993)
Electronics Lett.
, pp. 169-170
-
-
Win, P.1
-
20
-
-
0027838494
-
Temperature investigations of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al) GaAs passivation
-
L.W. Yin et al, "Temperature Investigations of the Gate-Drain Diode of Power GaAs MESFET with Low-Temperature-Grown (Al) GaAs Passivation", 1993, J. Elec. Materials, pp.1503-1505.
-
(1993)
J. Elec. Materials
, pp. 1503-1505
-
-
Yin, L.W.1
-
21
-
-
0027649594
-
Device performance of submicrometer MESFETs with LTG passivation
-
L.W. Yin et al, "Device Performance of Submicrometer MESFETs with LTG Passivation", 1993, Electr. Lett., pp. 1550-1551.
-
(1993)
Electr. Lett.
, pp. 1550-1551
-
-
Yin, L.W.1
-
22
-
-
0039438382
-
Modulation-doped InAlP/InGaAs field-effect transistors
-
J.M. Kuo, Y.J. Chau, D. Pavlidis, "Modulation-doped InAlP/InGaAs field-effect transistors", 1993, Appl. Phys. Lett, pp. 1105-1107.
-
(1993)
Appl. Phys. Lett
, pp. 1105-1107
-
-
Kuo, J.M.1
Chau, Y.J.2
Pavlidis, D.3
-
23
-
-
0027969432
-
A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier
-
W. Boulais et al, "A High Power Q-Band GaAs Pseudomorphic HEMTMonolithic Amplifier", 1994, IEEE MTT-S, pp. 649-652.
-
(1994)
IEEE MTT-S
, pp. 649-652
-
-
Boulais, W.1
-
24
-
-
34648850966
-
Design of high power-added efficiency FET amplifiers operating with very low drain bias for use in mobile telephones at 1.7 GHz
-
S. Dietsche, C. Duvanaud, G. Pataut, J. Obregon, "Design of High Power-Added Efficiency FET Amplifiers Operating with very Low Drain Bias for use in Mobile Telephones at 1.7 GHz", 1993, Eu. Microwave Conf, Madrid, pp. 252-254.
-
(1993)
Eu. Microwave Conf, Madrid
, pp. 252-254
-
-
Dietsche, S.1
Duvanaud, C.2
Pataut, G.3
Obregon, J.4
-
25
-
-
0028137932
-
S-band 48 % efficiency GaAs FET amplifier with 135 W output power for mobile communications satellite
-
K. Ishii et al, "S-Band 48 % Efficiency GaAs FET Amplifier with 135 W Output Power for Mobile Communications Satellite ", 1994, IEEE MTT-S, pp. 269-272.
-
(1994)
IEEE MTT-S
, pp. 269-272
-
-
Ishii, K.1
|