Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1995, Pages 101-104

  Hur, K Y ^a   McTaggart, R A ^a   LeBlanc, B W ^a   Hoke, W E ^a   Lemonias, P J ^a   Miller, A B ^a   Kazior, T E ^a   Aucoin, L M ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GATES (TRANSISTOR); OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CHANNEL CURRENTS; DOUBLE RECESS PROCESS; GATE TO DRAIN BREAKDOWN VOLTAGES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029486128     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)