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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4417-4418

Hydrogenation and annealing effects on GaN epilayers grown on sapphire substrates

(6) Kang, T W a Park, S H a Cho, H D a Kwak, M Y a Eom, G S b Kim, T W c

a Dongguk University (South Korea)

b Uiduk University (South Korea)

c Kwangwoon University (South Korea)

Author keywords

Annealing; GaN; Hydrogenation; Photoluminescence

Indexed keywords

ANNEALING; HETEROJUNCTIONS; HYDROGENATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

SAPPHIRE SUBSTRATES;

EPITAXIAL GROWTH;

EID: 0032131405 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4417 Document Type: Article

Times cited : (8)

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