Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase epitaxy on sapphire substrates

Applied Physics Letters

Volumn 71, Issue 25, 1997, Pages 3694-3696

  Cheng, Lisen ^a   Zhang, Ze ^a   Zhang, Guoyi ^b   Yu, Dapeng ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001211368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120484     Document Type: Article

References (12)

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