Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

IEEE Transactions on Semiconductor Manufacturing

Volumn 9, Issue 1, 1996, Pages 49-58

  Yang, Shyh Horng ^b   Morris, Steven J ^b   Tian, Shiyang ^b   Parab, Krishnakumar B ^b   Tasch Jr , Al F ^a,b  

^a IEEE

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

SINGLE CRYSTAL SILICON;

ION IMPLANTATION;

EID: 0030081719     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.484282     Document Type: Article

References (46)

1. J. Lindhard and M. Scharff, "Energy dissipation by ions in the keV region," Phys. Rev., vol. 124, no. 1, pp. 128-130, 1961.
2. L. A. Christel, J. F. Gibbons, and S. Mylroie, "An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets," J. Appl. Phys., vol. 51, no. 12, pp. 6176-6182, 1980.
3. M. D. Giles and J. F. Gibbons, "Calculation of channeling effects during ion implantation using the Boltzmann transport equation," IEEE Trans. Electron Devices, vol. ED-32, no. 10, pp. 1918-1924, 1985.
4. J. P. Biersack and L. G. Haggmark, "A Monte Carlo computer program for the transport of energetic ions in amorphous targets," Nucl. Inst. Meth., vol. 174, pp. 257-269, 1980.
5. B. J. Mulvaney, W. B. Richardson, and T. L. Crandle, "PEPPER - A process simulator for VLSI," IEEE Trans. Computer-Aided Design, vol. 8, no. 4, pp. 336-349, 1989.
6. T. L. Crandle and B. J. Mulvaney, "An ion implantation model incorporating damage calculations in solids in crystalline targets," IEEE Electron Device Lett., vol. 11, no. 1, pp. 42-44, 1990.
7. M. Posselt, "Crystal-TRIM and its application to investigations on channeling effects during ion implantation," Radiation Effects and Defects in Solids, vols. 130-131, pp. 87-119, 1994.
8. M. T. Robinson and I. M. Torrens, "Computer simulation of atomic displacement cascades in solids in the binary collision approximation," Phys. Rev. B., vol. 9, no. 12, pp. 5008-5024, 1974.
9. G. R. Srinivasan, "Monte Carlo modeling of ion implantation for silicon devices," IEEE IEDM Tech. Dig., pp. 687-690, 1989.
10. J. S. Moore and G. R. Srinivasan, "Monte Carlo simulation of ion implantation in crystalline silicon using MARLOWE," J. Electrochem Soc., vol. 135, no. 8, pp. 2034-2038, 1988.
11. R. F. Lever and K. W. Brannon, "Crystallographic aspects of low energy boron implantation into silicon," in Mat. Res. Soc. Symp. Proc., 1988, vol. 100, pp. 249-254.
12. K. W. Brannon and R. F. Lever, "Computational investigation of channeling of boron in silicon," in Electrochem. Soc. Proc. Symp., 1988, vol. 16, pp. 169-183.
13. N. Azziz, K. W. Brannon, and G. R. Srinivasan, "Electronic stopping power for low energy ions," in Mat. Res. Soc. Symp. Proc., 1985, vol. 45, pp. 71-76.
14. K. M. Klein, C. Park, and A. F. Tasch, "Monte Carlo simulation of boron implantation into single-crystal silicon," IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1614-1621, 1992.
15. A. Dygo, P. J. M. Smulders, and D. O. Boerma, "Simulation analysis of ion channeling spectra: Thermal vibrational amplitude in Si," Nucl. Inst. Phys. Res. Meth. B, vol. 64, pp. 701-705, 1992.
16. S.-H. Yang, D. Lim, S. J. Morris, and A. F. Tasch, "A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon," in Proc. NUPAD V, 1994, pp. 97-100.
17. M. Posselt, "BC and MD simulations of low-energy channeling implantation," in Conf. Computer Simulation Rad. Eff. Sol. Tech. Pgm. with Abstracts, July 1994, p. 125.
18. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, vol. 1. New York: Pergamon, 1985.
19. W. L. Smith, A. Rosenwaig, D. Willenborg, J. Opsal, and M. W. Taylor, "Ion implant monitoring with thermal wave technology," Solid State Tech., vol. 29, no. 1, pp. 85-92, 1986.
20. S.-H. Yang, S. J. Morris, D. L. Lim, A. F. Tasch, R. B. Simonton, D. Kamenitsa, C. Magee, and G. Lux, "An accurate and computationally-efficient semi-empirical model for arsenic implants into single-crystal (100) silicon," J. Electron. Mater., vol. 23, no. 8, pp. 801-808, 1994.
21. O. B. Firsov, "A qualitative interpretation of the mean electron excitation energy in atomic collision," Sov. Phys. - JETP, vol. 36, pp. 1076-1080, 1959.
22. K. Klein, C. Park, and A. F. Tasch, "Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon," Appl. Phys. Lett., vol. 57, no. 25, pp. 2701-2703, 1990.
23. G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, and S. Stingeder, "Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation," J. Appl. Phys., vol. 77, no. 8, pp. 3697-3703, 1995.
24. W. Brandt, "Effective charges of ions and the stopping power of dense media," Nucl. Inst. Meth., vol. 194, pp. 13-19, 1982.
25. P. M. Echenique, R. M. Nieminen, and R. H. Ritchie, "Density functional calculation of stopping power of an electron gas for slow ions," Solid State Comm., vol. 37, pp. 779-781, 1981.
26. J. A. Golovchenko, D. E. Cox, and A. N. Goland, "Critical analysis of the charge-state dependence of the energy loss of channeled ions," Phys. Rev. B, vol. 26, no. 5, pp. 2335-2340, 1982.
27. N. Barberan and P. M. Echenique, "Effective charge of slow ions in solids," J. Phys. B, vol. 19, pp. L81-L85, 1986.
28. P. M. Echenique, private communications.
29. P. M. Echenique and M. E. Uranga, "Density functional theory of stopping," in Interaction of Charged Particles with Solids and Surfaces, Gras-Marti et al., Eds. New York: Plenum, 1991, NATO ASI Series, vol. 271, pp. 39-72.
30. P. M. Echenique, R. M. Nieminen, J. C. Ashley, and R. H. Ritchie, "Nonlinear stopping power of an electron gas for slow ions," Phys. Rev. A, vol. 33, no. 2, pp. 897-903, 1986.
31. R. Wolfe, M. Needels, T. Arias, and J. Joannopoulos, "Visual revelations from silicon Ab Initio calculations," IEEE Comput., Graphics & Applicat., pp. 45-53, July 1992.
32. J. Joannopoulos, private communications.
33. H. J. Kang, R. Shimazu, T. Saito, and H. Yamakawa, "Computer simulation of damage processes during ion implantation," J. Appl. Phys., vol. 62, no. 7, pp. 2733-2737, 1987.
34. L. A. Christel, J. F. Gibbons, and T. W. Sigmon, "Displacement criterion for amorphization of silicon during ion implantation," J. Appl. Phys., vol. 52, no. 12, pp. 7143-7146, 1981.
35. K. Klein, C. Park, and A. F. Tasch, "Modeling of cumulative damage effects on ion implantation profiles," Nucl. Inst. Phys. Res. Meth. B, vol. 59/60, pp. 60-64, 1991.
36. P. Gupta, S. Morris, K. Klein, S.-H. Yang, C. Park, and A. Tasch, "Monte Carlo modeling of BF2 ion implantation into single-crystal silicon," in Electron. Mat. Conf. Tech. Pgm. with Abstracts, June 24, 1992, p. 51.
37. M. Posselt, "Channeling effects and defect accumulation in ion implantation," Nucl. Inst. Meth. Phys. Res. B, vol. 90, pp. 373-377, 1994.
38. M. Servidori, P. Zaumscil, U. Winter, F. Cembali, and A. M. Mazzone, "Defect distribution in ion implanted silicon: Comparison between Monte Carlo simulation and triple crystal X-ray measurements," Nucl. Inst. Meth. Phys. Res. B, vol. 22, pp. 497-498, 1987.
39. M. Servidori, R. Angelucci, F. Negrini, and S. Solmi, "Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials," J. Appl. Phys., vol. 61, no. 5, pp. 1834-1840, 1987.
40. A. M. Mazzone, "Defect distribution in ion-implanted silicon," Phys. Stat. Sol., vol. 95, pp. 149-154, 1986.
41. S. Dunham, "Modeling of dopant diffusion during annealing of sub-amorphizing implants," in Mat. Res. Soc. Symp. Proc., 1994, vol. 316, pp. 197-204.
42. A. Simionescu, S. Herzog, G. Hobler, R. Schork, J. Lorenz, C. Tian, and G. Stingeder, "Monte Carlo simulation of channeled arsenic implantations in silicon," IIT Tech. Pgm. Abstracts, p. 2.18, 1994.
43. _, "Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon," Nucl. Inst. Phys. Res. Meth. B, vol. 100, pp. 483-489, 1995.
44. J. Narayan, D. Fathy, O. S. Oen, and O. W. Holland, "Atomic structure of ion implantation damage and process of amorphization in semiconductors," J. Vac. Sci. Tech. A, vol. 2, no. 3, pp. 1303-1308, 1984.
45. J. F. Gibbons, "Ion implantation in semiconductor - Part II: Damage production and annealing," Trans. IEEE, vol. 60, no. 9, pp. 1062-1096, 1972.
46. + implanted Si," Nucl. Inst. Phys. Res. Meth. B, vol. 59/60, pp. 1041-1044, 1991.