Diffusion and interactions of point defects in silicon: molecular dynamics simulations

Nuclear Inst. and Methods in Physics Research, B

Volumn 102, Issue 1-4, 1995, Pages 247-255

  Gilmer, G H ^a   Diaz de la Rubia, T ^b   Stock, D M ^a   Jaraiz, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001620077     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)80150-K     Document Type: Article

References (21)

1. First-principles calculations of self-diffusion constants in silicon
2. Ab Initio Molecular Dynamics of Semiconductor Defects
3. The Diffusivity of Self-Interstitials in Silicon