Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

Nuclear Inst. and Methods in Physics Research, A

Volumn 342, Issue 1, 1994, Pages 119-125

  Fretwurst, E ^a   Feick, H ^a   Glaser, M ^b   Gossling C ^c   Heijne, E H M ^b   Hess, A ^a   Lemeilleur, F ^b   Lindstrom G ^a   Mahlmann K H ^a   Rolf, A ^a   Schulz, T ^a   Soave, C ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b CERN   (Switzerland)

^c TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COLLIDING BEAM ACCELERATORS; HEAT TREATMENT; IMPURITIES; MODELS; NEUTRONS; RADIATION DAMAGE; RADIATION HARDENING; THERMAL EFFECTS;

DEPLETION VOLTAGE; ISOCHRONAL STUDY; ISOTHERMAL STUDY; RADIATION HARDNESS; REVERSE ANNEALING;

SILICON SENSORS;

EID: 0028400372     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)91417-6     Document Type: Article

References (15)

1. talk given at the 5th Topical Seminar on Experimental Apparatus for High Energy Particle Physics and Astrophys
2. talk presented at the International Conference in Advanced Technology and Particle Physics
3. Electron Radiation Damage in Semiconductors and Metals
4. Int. Symp. on Development and Application of Semiconductor Tracking Detectors