A comparative study of heavily irradiated silicon and non irradiated si lec gaas detectors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 1, 1998, Pages 597-601

  Biggeri, U ^a  

^a Dipartimento Di Energetica 'S Stecco'   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; CRYSTAL DEFECTS; IRRADIATION; MATHEMATICAL MODELS; NEUTRONS; PERFORMANCE; PROTONS; RADIATION DAMAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

CHARGE COLLECTION EFFICIENCY; PROTON IRRADIATION; RADIATION INDUCED DEEP TRAP; SEMIINSULATING GALLIUM ARSENIDE DETECTOR; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0032097395     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682455     Document Type: Article

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