An optical-beam-induced-current study of active region and charge collection efficiency of GaAs particle detectors

Nuclear Inst. and Methods in Physics Research, A

Volumn 355, Issue 2-3, 1995, Pages 420-424

  Alietti, M ^d   Berluti, L ^b   Canali, C ^d   Castaldini, A ^b   Cavallini, A ^b   Cetronio, A ^a   D'Auria, S ^b   del Papa, C ^b   Lanzieri, C ^a   Nava, F ^d   Proia, M ^b   Rinaldi, P ^b   Zichichi, A ^c  

^a ALENIA SPAZIO   (Italy)

^b INFN SEZIONE DI BOLOGNA   (Italy)

^c CERN   (Switzerland)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009988027     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)01123-0     Document Type: Article

References (14)

1. X-ray detectors based on semi-insulating GaAs substrate
2. Bulk GaAs room temperature radiation detectors
3. GaAs solid state detectors for particle physics
4. Gallium arsenide particle detectors: a study of the active region and charge-collection efficiency
5. Charge collection and electric field in GaAs particle detectors
6. Imaging of high field in SI GaAs particle detectors
7. Influence of electron traps on charge collection efficiency in GaAs radiation detectors
8. Charge transport properties of undoped SI LEC GaAs solid-state detectors