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Volumn 349, Issue 1, 1994, Pages 156-159

Influence of electron traps on charge-collection efficiency in GaAs radiation detectors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; DEFECTS; GAMMA RAYS; IONS; NEUTRONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0028495969     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)90617-3     Document Type: Article
Times cited : (18)

References (16)
  • 10
    • 84913077663 scopus 로고
    • Proc. 3rd Int. Conf. on Advanced Technology and Particle Physics
    • Villa Olmo, Como, 1992, 2nd ed.
    • (1993) Nucl. Phys. B , vol.32
    • Beaumont1
  • 12
    • 84913064666 scopus 로고    scopus 로고
    • A. Castaldini et al., Deep levels in LEC SI GaAs investigated by photo-induced current spectroscopy, subm. to J. Appl. Phys.
  • 14
    • 84913029526 scopus 로고    scopus 로고
    • K. Berwick et al., Studies of Charge Collection in GaAs Radiation Detectors, to be publ. in Nucl. Instr. and Meth. A.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.