Doping of gallium nitride using disilane

Journal of Electronic Materials

Volumn 24, Issue 11, 1995, Pages 1547-1550

  Wickenden, A E ^a   Rowland, L B ^a   Doverspike, K ^a   Gaskill, D K ^a   Freitas, J A ^b   Simons, D S ^c   Chi, P H ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Disilane; gallium nitride (GaN); metalorganic chemical vapor deposition (MOCVD); organometallic vapor phase epitaxy (OMVPE); silicon doping

Indexed keywords

EID: 51649146133     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02676809     Document Type: Article

References (22)

1. Silicon doping of GaN using disilane
2. The Pyrolysis of Monosilane
3. Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy
4. Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
5. Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy