Investigations of donor and acceptor removal and long term annealing in silicon with different boron/phosphorus ratios

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 228-233

  Wunstorf, R ^a,d   Bugg, W M ^a   Walter, J ^b   Garber, F W ^b   Larson, D ^c  

^a UNIVERSITY OF TENNESSEE   (United States)

^b IntraSpec Inc ^*  (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MATHEMATICAL MODELS; NEUTRON IRRADIATION; NEUTRONS; PHOSPHORUS; RADIATION DETECTORS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON;

ACCEPTOR REMOVAL RATE; BORON PHOSPHORUS RATIO; DONOR REMOVAL RATE; ELECTRICALLY ACTIVE IMPURITY; LIMITING FACTOR; REVERSE ANNEALING; SILICON DETECTORS;

RADIATION DAMAGE;

EID: 0030211887     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00217-3     Document Type: Article

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