A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 338-340

  Cheng, Huang Chung ^a,c   Kang, Tzong Kuei ^a   Ku, Tzun Kun ^a   Dai, Bau Tong ^b,c   Chen, Liang Po ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CAPACITORS; CRYSTAL DEFECTS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON CYCLOTRON RESONANCE; ETCHING; ION BOMBARDMENT; OHMIC CONTACTS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

ANTENNA CHARGING EFFECTS; MOS CAPACITORS; POLYSILICON GATE; TRENCHING EFFECT;

MOS DEVICES;

EID: 0030182279     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506360     Document Type: Article

References (8)

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