Multiple negative-differential-resistance (MNDR) phenomena of a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositioned inxgai_as quantum wells

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 373-379

  Liu, Wen Chau ^a   Laih, Lib Wen ^a   Cheng, Shiou Ying ^a   Chang, Wen Lung ^a   Wang, Wei Chou ^b   Chen, Jing Yuh ^b   Lin, Po Hung ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

Metal insulator semiconductor (mis); Negative differential resistance (ndr); Quantum well; Switching

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SWITCHING;

METAL INSULATOR SEMICONDUCTOR INSULATOR METALS (MISIM); MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE (MNDR);

MIS DEVICES;

EID: 0032002449     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658669     Document Type: Article

References (16)

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