Switching characteristics of MINPN devices

Solid State Electronics

Volumn 32, Issue 3, 1989, Pages 179-189

  Chang, David C Y ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS;

BREAKDOWN VOLTAGE; I-V CHARACTERISTICS; MINPN DEVICES; MIS MINORITY INJECTION; REVERSE PN JUNCTIONS; SWITCHING CHARACTERISTICS;

SEMICONDUCTOR DEVICES, MIS;

EID: 0024630857     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90090-7     Document Type: Article

References (28)

1. New types of metal-insulator-semiconductor switch
2. A survey of new bipolar amplifying and negative-resistance devices
3. Three terminal measurements of current amplification factors of controlled rectifiers
4. Turn-on criterion for p-n-p-n devices
5. A critique of the theory of p-n-p-n devices
6. The effect of an interfacial layer on minority carrier injection in forward-biased silicon Schottky diodes
7. Ellipsometry measurements on SiO2 films for thicknesses under 200Å