Concepts of gain at an oxide-semiconductor interface and their application to the TETRAN-A tunnel emitter transistor-And to the MIS switching device

Solid State Electronics

Volumn 29, Issue 3, 1986, Pages 287-303

  Simmons, J G ^a   Taylor, G W ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS - TUNNELING;

CURRENT GAIN; OXIDE-SEMICONDUCTOR INTERFACE; TETRAN; TUNNEL EMITTER TRANSISTOR; TUNNEL-OXIDE;

TRANSISTORS, BIPOLAR;

EID: 0022677622     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90207-8     Document Type: Article

References (5)