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Volumn 39, Issue 10, 1992, Pages 2214-2219

Investigation of AlGaAs/GaAs Superlattice-Emitter Resonant Tunneling Bipolar Transistor (SE-RTBT)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BIPOLAR TRANSISTORS; ELECTRON TUNNELING; LOGIC CIRCUITS;

EID: 0026940477     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158790     Document Type: Article
Times cited : (21)

References (23)
  • 1
    • 0020295376 scopus 로고
    • Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistor
    • P. M. Asbeck, D. L. Miller, R. Asatourian, and C. G. Kirkpatrick, “Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistor,” IEEE Electron Device Lett., vol. EDL-3, no. 12, p. 403, 1982.
    • (1982) IEEE Electron Device Lett , vol.EDL-3 , Issue.12 , pp. 403
    • Asbeck, P.M.1    Miller, D.L.2    Asatourian, R.3    Kirkpatrick, C.G.4
  • 2
    • 0020831432 scopus 로고
    • Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors
    • S. S. Tan and A. G. Milnes, “Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors,” IEEE Trans. Electron Devices, vol. ED-30, no. 10, pp. 1289–1294, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , Issue.10 , pp. 1289-1294
    • Tan, S.S.1    Milnes, A.G.2
  • 3
    • 0023293402 scopus 로고
    • Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors
    • S. Tiwari, S. L. Wright, and A. W. Kleinsasser, “Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors,” IEEE Trans. Electron Devices, vol. ED-34, no. 2, pp. 185–198, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.2 , pp. 185-198
    • Tiwari, S.1    Wright, S.L.2    Kleinsasser, A.W.3
  • 5
    • 0023998254 scopus 로고
    • A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
    • T. Ishibashi and Y. Yamauchi, “A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure,” IEEE Trans. Electron Devices, vol. 35, no. 4, pp. 401–404, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.4 , pp. 401-404
    • Ishibashi, T.1    Yamauchi, Y.2
  • 6
    • 84938006654 scopus 로고
    • Theory of a wide-gap emitter for transistors
    • H. Droemer, “Theory of a wide-gap emitter for transistors,” Proc. IRE, vol. 45, pp. 1535–1537, 1957.
    • (1957) Proc. IRE , vol.45 , pp. 1535-1537
    • Droemer, H.1
  • 7
    • 0016508511 scopus 로고
    • GaAlAs/GaAs heterojunction transistors with high injection efficiency
    • M. Konagai and K. Takahashi, “GaAlAs/GaAs heterojunction transistors with high injection efficiency,” J. Appl. Phys., vol. 46, p. 2120, 1975.
    • (1975) J. Appl. Phys , vol.46 , pp. 2120
    • Konagai, M.1    Takahashi, K.2
  • 8
    • 0023984345 scopus 로고
    • Improving collector-current uniformity in emitter-grade AlGaAs/GaAs heterojunction bipolar transistors
    • C. Takano, K. Taira, and H. Kawai, “Improving collector-current uniformity in emitter-grade AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 9, no. 3, p. 142, 1988.
    • (1988) IEEE Electron Device Lett , vol.9 , Issue.3 , pp. 142
    • Takano, C.1    Taira, K.2    Kawai, H.3
  • 11
    • 0022754225 scopus 로고
    • A tunneling emitter bipolar transistor
    • J. Xu and M. Shur, “A tunneling emitter bipolar transistor,” IEEE Electron Device Lett., vol. EDL-7, no. 7, pp. 416–418, 1986.
    • (1986) IEEE Electron Device Lett , vol.EDL-7 , Issue.7 , pp. 416-418
    • Xu, J.1    Shur, M.2
  • 12
    • 36549096960 scopus 로고
    • Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
    • N. Chang, R. Fischer, and H. Morkoç, “Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors,” Appl. Phys. Lett., vol. 47, no. 3, pp. 313–315, 1985.
    • (1985) Appl. Phys. Lett , vol.47 , Issue.3 , pp. 313-315
    • Chang, N.1    Fischer, R.2    Morko, H.3
  • 13
    • 0000663423 scopus 로고
    • Origin of high offset voltage in AlGaAs/GaAs heterojunction bipolar transistor
    • S. C. Lee, J. N. Kau, and H. H. Lin, “Origin of high offset voltage in AlGaAs/GaAs heterojunction bipolar transistor,” Appl. Phys. Lett., vol. 45, no. 10, pp. 1114–1116, 1984.
    • (1984) Appl. Phys. Lett , vol.45 , Issue.10 , pp. 1114-1116
    • Lee, S.C.1    Kau, J.N.2    Lin, H.H.3
  • 14
    • 0023391774 scopus 로고
    • Al-GaAs/GaAs bipolar transistor with a modulation-doped superlattice emitter
    • J. F. Palmier, A. Sibille, J. C. Harmand, and J. Dangla, “Al GaAs/GaAs bipolar transistor with a modulation-doped superlattice emitter,” Electron. Lett., vol. 23, pp. 936–938, 1987.
    • (1987) Electron. Lett , vol.23 , pp. 936-938
    • Palmier, J.F.1    Sibille, A.2    Harmand, J.C.3    Dangla, J.4
  • 15
    • 0023145540 scopus 로고
    • An (Al, Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter
    • M. A. Rao, E. J. Caine, S. I. Ling, and H. Kroemer, “An (Al, Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter,” IEEE Electron Device Lett., vol. EDL-8, p. 30, 1987.
    • (1987) IEEE Electron Device Lett , vol.EDL-8 , pp. 30
    • Rao, M.A.1    Caine, E.J.2    Ling, S.I.3    Kroemer, H.4
  • 16
    • 0024733314 scopus 로고
    • A heterojunction bipolar - transistor with separate carrier injection and confinement
    • L. F. Luo, H. L. Evans, and E. S. Yang, “A heterojunction bipolar - transistor with separate carrier injection and confinement,” IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1844–1846, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.9 , pp. 1844-1846
    • Luo, L.F.1    Evans, H.L.2    Yang, E.S.3
  • 17
    • 0025448784 scopus 로고
    • An Al-GaAs/GaAs heterostructure-emitter bipolar transistor
    • X. Wu, Y. Q. Wang, L. F. Luo, and E. S. Yang, “An Al-GaAs/GaAs heterostructure-emitter bipolar transistor,” IEEE Electron Device Lett., vol. 11, no. 6, pp. 264–266, 1990.
    • (1990) IEEE Electron Device Lett , vol.11 , Issue.6 , pp. 264-266
    • Wu, X.1    Wang, Y.Q.2    Luo, L.F.3    Yang, E.S.4
  • 18
    • 0001347698 scopus 로고
    • Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling
    • F. Capasso, S. Sen, A. Y. Cho, and D. L. Sivco, “Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling,” Appl. Phys. Lett., vol. 53, no. 12, pp. 1056–1058, 1988.
    • (1988) Appl. Phys. Lett , vol.53 , Issue.12 , pp. 1056-1058
    • Capasso, F.1    Sen, S.2    Cho, A.Y.3    Sivco, D.L.4
  • 19
    • 0024088640 scopus 로고
    • Multiple state resonant tunneling bipolar transistor operating at room temperature and its application as a frequency multiplier
    • S. Sen, F. Capasso, A. Y. Cho, and D. L. Sivco, “Multiple state resonant tunneling bipolar transistor operating at room temperature and its application as a frequency multiplier,” IEEE Electron Device Lett., vol. 9, no. 10, 533–535, 1988.
    • (1988) IEEE Electron Device Lett , vol.9 , Issue.10 , pp. 533-535
    • Sen, S.1    Capasso, F.2    Cho, A.Y.3    Sivco, D.L.4
  • 20
    • 0024704311 scopus 로고
    • Resonant tunneling characteristic in InGaAs/InAlAs MQW diodes with Si-doped quantum wells
    • Y. Kawamura, H. Asai, K. Wakita, O. Mikami, and M. Naganuma, “Resonant tunneling characteristic in InGaAs/InAlAs MQW diodes with Si-doped quantum wells,” Japan. J. Appl. Phys., vol. 28, no. 7, pp. 1104–1107, 1989.
    • (1989) Japan. J. Appl. Phys , vol.28 , Issue.7 , pp. 1104-1107
    • Kawamura, Y.1    Asai, H.2    Wakita, K.3    Mikami, O.4    Naganuma, M.5
  • 21
    • 0020193772 scopus 로고
    • Semiconducting and other major properties of gallium arsenide
    • J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide,” J. Appl. Phys., vol. 53, no. 10, pp. R123-R181, 1982.
    • (1982) J. Appl. Phys , vol.53 , Issue.10 , pp. R123-R181
    • Blakemore, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.