-
1
-
-
33750030048
-
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattice and their device applications
-
F. Capasso, K. Mohammed, and A. Y. Cho, “Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattice and their device applications,” IEEE J. Quantum Electron., vol. QE-22, pp. 1853-1869, 1986.
-
(1986)
IEEE J. Quantum Electron
, vol.QE-22
, pp. 1853-1869
-
-
Capasso, F.1
Mohammed, K.2
Cho, A.Y.3
-
2
-
-
36549100559
-
Millimeter-band oscillations based on resonant tunneling in a double barrier diode at room temperature
-
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, and C. D. Parker, ' 'Millimeter-band oscillations based on resonant tunneling in a double barrier diode at room temperature,” Appl. Phys. Lett., vol. 50, pp. 83-85, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, pp. 83-85
-
-
Brown, E.R.1
Sollner, T.C.L.G.2
Goodhue, W.D.3
Parker, C.D.4
-
3
-
-
0022775885
-
New resonant tunneling diode with a deep quantum well
-
H. Toyoshima, Y. Ando, A. Okamoto, and T. Itoh, “New resonant tunneling diode with a deep quantum well,” Japan. J. Appl. Phys., vol. 25, pp. L786-L788, 1986.
-
(1986)
Japan. J. Appl. Phys.
, vol.25
, pp. L786-L788
-
-
Toyoshima, H.1
Ando, Y.2
Okamoto, A.3
Itoh, T.4
-
4
-
-
0012581582
-
Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well
-
H. Morkoç, J. Chen, U. K. Reddy, T. Henderson, and S. Luryi, “Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well,” Appl. Phys. Lett., vol. 49, pp. 70-72, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 70-72
-
-
Morkoç, H.1
Chen, J.2
Reddy, U.K.3
Henderson, T.4
Luryi, S.5
-
5
-
-
21544482969
-
Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device
-
F. Capasso and R. A. Kiehl, “Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device,” J. Appl. Phys., vol. 58, pp. 1366-1368, 1985.
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 1366-1368
-
-
Capasso, F.1
Kiehl, R.A.2
-
6
-
-
0022152737
-
A new functional resonant tunneling hot electron transistor (RHET)
-
part 2
-
N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, and N. Nishi, “A new functional resonant tunneling hot electron transistor (RHET),” Japan. J. Appl. Phys., part 2, vol. 24, pp. L583-L584, 1985.
-
(1985)
Japan. J. Appl. Phys.
, vol.24
-
-
Yokoyama, N.1
Imamura, K.2
Muto, S.3
Hiyamizu, S.4
Nishi, N.5
-
7
-
-
0022791620
-
Quantum well resonant tunneling bipolar transistor operating at room temperature “Quantum well resonant tunneling bipolar transistor operating at room temperature
-
F. Capasso, S. Sen, A. C. Gossard, A. L. Hutchinson, and J. H. English,Quantum well resonant tunneling bipolar transistor operating at room temperature “Quantum well resonant tunneling bipolar transistor operating at room temperature,” IEEE Electron Device Lett., vol. EDL-7, pp. 573-576, 1986.
-
IEEE Electron Device Lett.
, vol.EDL-7
, pp. 573-576
-
-
Capasso, F.1
Sen, S.2
Gossard, A.C.3
Hutchinson, A.L.4
English, J.H.5
-
8
-
-
0023014959
-
A resonant-tunneling bipolar transistor (RBT): A proposal and demonstration for new functional devices with high current gains
-
T. Futatsugi, Y. Yamaguchi, K. Ishii, K. Imamura, S. Muto, N. \Yokoyama, and A. Shibatomi, “A resonant-tunneling bipolar transistor (RBT): A proposal and demonstration for new functional devices with high current gains,” in IEDM Tech. Dig., pp. 286-289, 1986.
-
(1986)
IEDM Tech. Dig.
, pp. 286-289
-
-
Futatsugi, T.1
Yamaguchi, Y.2
Ishii, K.3
Imamura, K.4
Muto, S.5
Yokoyama, N.6
Shibatomi, A.7
-
9
-
-
0023296050
-
A resonant tunneling gate field-effect transistor
-
Feb. 26
-
F. Capasso, S. Sen, F. Beltram, and A. Y. Cho, “A resonant tunneling gate field-effect transistor,” Electron. Lett., vol. 23, pp. 225226, Feb. 26, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 225226
-
-
Capasso, F.1
Sen, S.2
Beltram, F.3
Cho, A.Y.4
-
10
-
-
0001484451
-
Experimental realization of a resonant tunneling transistor
-
T. K. Woodward, T. C. McGill, and R. D. Burnham, “Experimental realization of a resonant tunneling transistor,” Appl. Phys. Lett., vol. 50, pp. 451-453, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, pp. 451-453
-
-
Woodward, T.K.1
McGill, T.C.2
Burnham, R.D.3
-
11
-
-
0001688197
-
Tunneling transfer field effect transistor: A negative transconductance device
-
B. Vinter and A. Tardella, “Tunneling transfer field effect transistor: A negative transconductance device,” Appl. Phys. Lett., vol. 50, pp. 410-412, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, pp. 410-412
-
-
Vinter, B.1
Tardella, A.2
-
12
-
-
0005140105
-
Inverted base-collector tunnel transistors
-
A. R. Bonnefoi, D. H. Chow, and T. C. McGill, “Inverted base-collector tunnel transistors,” Appl. Phys. Lett., vol. 47, pp. 888-890, 1985.
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 888-890
-
-
Bonnefoi, A.R.1
Chow, D.H.2
McGill, T.C.3
-
13
-
-
51149221373
-
Resonant tunneling of two dimensional electrons through a quantum wire: A negative transconductance device
-
1985; see also “Erratum,” Appl. Phys. Lett., vol. 48, p. 1693
-
S. Luryi and F. Capasso, “Resonant tunneling of two dimensional electrons through a quantum wire: A negative transconductance device,” Appl. Phys. Lett., vol. 47, pp. 1347-1349, 1985; see also “Erratum,” Appl. Phys. Lett., vol. 48, p. 1693, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.47
, pp. 1347-1349
-
-
Luryi, S.1
Capasso, F.2
-
14
-
-
0021640132
-
Microelectronics: End of the beginning or beginning of the end?
-
G. H. Heilmeier, “Microelectronics: End of the beginning or beginning of the end?,” in IEDM Tech. Dig., pp. 2-5, 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 2-5
-
-
Heilmeier, G.H.1
-
15
-
-
0003009024
-
New high speed quantum well and variable gap Superlattice devices
-
G. A. Mourou, D. M. Bloom, and C. H. Lee, Eds. Berlin: Springer
-
F. Capasso, “New high speed quantum well and variable gap Superlattice devices,” in Picosecond Electronic and Optoelectronics, G. A. Mourou, D. M. Bloom, and C. H. Lee, Eds. Berlin: Springer, 1985, pp. 112-130.
-
(1985)
Picosecond Electronic and Optoelectronics
, pp. 112-130
-
-
Capasso, F.1
-
16
-
-
0021437220
-
Charge injection transistor based on real-space hot-electron transfer
-
S. Luryi, A. Kastalsky, A. C. Gossard, and R. H. Hendel, “Charge injection transistor based on real-space hot-electron transfer,” IEEE Trans. Electron. Devices, vol. ED-31, pp. 832-839, 1984.
-
(1984)
IEEE Trans. Electron. Devices
, vol.ED-31
, pp. 832-839
-
-
Luryi, S.1
Kastalsky, A.2
Gossard, A.C.3
Hendel, R.H.4
-
18
-
-
0021388173
-
An all-CMOS ternary identity cell for VLSI implementation
-
Mar. 1
-
A. Heung and H. T. Mouftah, “An all-CMOS ternary identity cell for VLSI implementation,” Electron. Lett., vol. 20, pp. 221-222, Mar. 1, 1984.
-
(1984)
Electron. Lett.
, vol.20
, pp. 221-222
-
-
Heung, A.1
Mouftah, H.T.2
|