Three-terminal voltage-controlled GaAs quantum well switching device

Solid State Electronics

Volumn 34, Issue 2, 1991, Pages 163-166

  Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTOR DEVICES - SWITCHING;

QUANTUM WELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026103013     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90083-B     Document Type: Article

References (14)

1. Superlattice and Negative Differential Conductivity in Semiconductors
2. Superlattice gate and graded superlattice buffer for microwave power metal–semiconductor field effect transistor grown by molecular-beam epitaxy