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Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 143-148

Atomic scale study of InAs/GaAs heteroepitaxy

(1) Sasaki, Akio a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTROLUMINESCENCE; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC SCALE STUDY; GROWTH TRANSITION; HETEROEPITAXY; INITIAL GROWTH LAYER; ISLAND FORMATION; MESOSCOPIC STRUCTURES; PHOTOCURRENT SPECTROSCOPY; QUANTUM EFFECTS; STRANSKI-KRASTANOV GROWTH;

EPITAXIAL GROWTH;

EID: 0030563378 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)01045-9 Document Type: Article

Times cited : (5)

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