Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

Journal of Physics D: Applied Physics

Volumn 30, Issue 17, 1997, Pages 2411-2420

  Chim, W K ^a   Chan, D S H ^a   Tao, J M ^a   Lou, C L ^a   Leang, S E ^a   Teow, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EMISSION SPECTROSCOPY; HOT CARRIERS; INTERFACES (MATERIALS); LIGHT EMISSION; LIGHT SCATTERING; PHOTONS; SUBSTRATES;

DOUBLE DIFFUSED DRAIN (DDD) MOSFET DEVICES; LARGE ANGLE TILT IMPLANTED DRAIN (LATID) MOSFET DEVICES;

MOSFET DEVICES;

EID: 0031558465     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/17/007     Document Type: Article

References (17)

1. Groeseneken G, Maes H E, Beltran N and De Keersmaecker R F 1984 A reliable approach to charge-pumping measurements in MOS transistors IEEE Trans. Electron. Dev. 31 (1) 42-53
2. Heremans P, Witters J, Groeseneken G and Maes H E 1989 Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation IEEE Trans. Electron. Dev. 36 (7) 1318-35
3. Speckbacher P, Berger J, Asenov A, Koch F and Weber W 1995 The gated-diode configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation IEEE Trans. Electron. Dev. 42 (7) 1287-96
4. Kavalieros J T and Sah C-T 1996 Separation of interface and nonuniform oxide traps by the dc current-voltage method IEEE Trans. Electron. Dev. 43 (1) 137-41
5. Lanzoni M, Sangiorgi E, Fiegna C, Manfredi M and Ricco B 1991 Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs IEEE Electron. Dev. Lett. 12 341-3
6. Selmi L 1995 Silicon luminescence techniques for the characterization of hot-carrier and degradation phenomena in MOS devices Microelectron. Eng. 28 249-56
7. Tao J M, Chan D S H and Chim W K 1996 Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region J. Phys. D: Appl. Phys. 29 1380-5
8. Groeseneken G, Maes H E, Beltran N and De Keersmaecker R F 1984 A reliable approach to charge-pumping measurements in MOS transistors IEEE Trans. Electron. Dev. 31 (1) 42-53
9. Leang S E, Chan D S H and Chim W K 1996 New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs Proc. 1996 IEEE Int. Reliability Physics Symp. (Dallas, 30 April-2 May 1996) pp 311-7
10. Chim W K, Leang S E and Chan D S H 1997 Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm J. Appl. Phys. 81 (4) 1992-2001
11. Doyle B, Bourcerie M, Marchetaux J C and Boudou A 1990 Interface state creation and charge trapping in the medium-to-high gate voltage range during hot-carrier stressing of n-MOS transistors IEEE Trans. Electron. Dev. 37 (3) 744-54
12. Liu Y Y, Tao J M, Chan D S H, Phang J C H and Chim W K 1995 A new spectroscopic photon emission microscope system for semiconductor device analysis Proc. 5th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits (Singapore, 27 November-1 December 1995) pp 60-5
13. Tao J M, Chim W K, Chan D S H, Phang J C H and Liu Y Y 1996 A high-sensitivity photon emission microscope system with continuous wavelength spectroscopic capability Proc. 1996 IEEE Int. Reliability Physics Symp. (Dallas, 30 April-2 May 1996) pp 360-5
14. Chan D S H, Phang J C H, Chim W K, Liu Y Y and Tao J M 1996 Design and performance of a new spectroscopic photon emission microscope system for the physical analysis of semiconductor devices Rev. Sci. Instrum. 67 (7) 2576-83
15. Hu C, Tam S C, Hsu F C, Ko P K, Chan T Y and Terrill K W 1986 Hot-electron-induced MOSFET degradation-model, monitor and improvement IEEE Trans. Electron. Dev. 32 (2) 375-85
16. Hori T, Hirase J, Odake Y and Yasui T 1992 Deep submicron large angle tilt implanted drain (LATID) technology IEEE Trans. Electron Dev. 39 (10) 2312-24
17. Zhao J, Chen H-S, Teng C S and Moberly L 1996 Improved analog hot-carrier immunity for CMOS mixed signal applications with LATID technology IEEE Trans. Electron Dev. 43 (6) 954-7