New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 311-317

  Leang, S E ^a   Chan, D S H ^a   Chim, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; INTERFACES (MATERIALS); RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

HOT CARRIER INDUCED INTERFACE STATES; HOT CARRIER STRESS; TRAPPED CHARGES;

MOSFET DEVICES;

EID: 0029694946     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)