Separation of interface and nonuniform oxide traps by the DC current-voltage method

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 137-141

  Kavalieros, Jack T ^a   Sah, Chih Tang ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; ELECTRON EMISSION; HOT CARRIERS; MOS DEVICES; SUBSTRATES; VOLTAGE MEASUREMENT;

BIPOLAR JUNCTION TRANSISTOR; CHANNEL HOT ELECTRON STRESS; CHARGED OXIDE TRAPS; ELECTRON IMPACT EMISSION; METAL OXIDE SILICON CAPACITANCE; SUBSTRATE HOT ELECTRON INJECTION;

SILICA;

EID: 0029731680     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477604     Document Type: Article

References (26)

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