Fabrication of metal-oxide-semiconductor field-effect-transistor-structured silicon field emitters with a polysilicon dual gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7736-7740

  Kanemaru, Seigo ^a   Ozawa, Ken ^b   Ehara, Keigo ^c   Hirano, Takayuki ^d   Tanoue, Hisao ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c Toyo Kohan Co Ltd   (Japan)

^d KOBE STEEL LTD   (Japan)

Author keywords

Dual gate MOSFET emitter; Emission mechanism; FET controlled emission; Field emission; Silicon field emitter array

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRON EMISSION; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SILICON FIELD EMITTERS;

MOSFET DEVICES;

EID: 0031361103     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7736     Document Type: Article

References (16)

1. A. Ghis, R. Mayer, P. Ramboud, F. Levy and T. Leroux: IEEE Trans. Electron Devices 38 (1991) 2320.
2. S. Itoh, T. Niiyama, M. Taniguchi and T. Watanabe: J. Vac. Sci. & Technol. B 14 (1996) 1977.
3. R. Baptist, F. Bachelet and C. Constancias: J. Vac. Sci. &: Technol. B 15 (1997) 385.
4. A. Ting, C. M. Tang, T. Swyden, D. McCarthy and M. Peckerar: Tech. Dig. 4th Int. Vacuum Microelectronics Conf. (Nagahama, 1991) p. 200.
5. K. Yokoo, M. Arai, M. Mori, J. Bae and S. Ono: J. Vac. Sci. & Technol. B 13 (1995) 491.
6. G. Hashiguchi H. Mimura and H. Fujita: Jpn. J. Appl. Phys. 35 (1996) L84.
7. D. Kim, S. J. Kwon and J. D. Lee: Tech. Dig. 9th Int. Vacuum Microelectronics Conf. (Saint Petersburg, 1996) p. 534.
8. T. Hirano, S. Kanemaru, H. Tanoue and J. Itoh: Jpn. J. Appl. Phys. 34 (1995) 6907.
9. S. Kanemaru, T. Hirano, H. Tanoue and J. Itoh: J. Vac. Sci. & Technol. B 14 (1996) 1885.
10. T. Hirano, S. Kanemaru and J. Itoh: Jpn. J. Appl. Phys. 35 (1996) L861.
11. T. Hirano, S. Kanemaru, H. Tanoue and J. Itoh: Jpn. J. Appl. Phys. 35 (1996) 6637.
12. S. Kanemaru, T. Hirano, H. Tanoue and J. Itoh: Appl. Surf. Sci. 111 (1997) 218.
13. K. Betsui: Tech. Dig. 4th. Int. Vacuum Microelectronics Conf. (Nagahama, 1991) p. 26.
14. J. Itoh, T. Hirano and S. Kanemaru: Appl. Phys. Lett. 69 (1996) 1577.
15. D. Sarsembinov, S. Yamamoto, J. Itoh, S. Kanemaru and T. Hirano: IEICE Tech. Rep. ED95-130 (1995) 9.
16. J. T. Trujillo, A. G. Chakhovskoi and C. E. Hunt: J. Vac. Sci. & Technol. B 15 (1997) 401.