Fabrication of a new Si field emitter tip with metal-oxide-semiconductor field-effect transistor (MOSFET) structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6637-6640

  Hirano, Takayuki ^a,b   Kanemaru, Seigo ^a   Tanoue, Hisao ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

Cathode; Electron emission; Field emitter; Ion implantation; MOSFET; Silicon emitter; Transistor; Vacuum microelectronics

Indexed keywords

EID: 0001096782     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6637     Document Type: Article

References (11)

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