A new metal-oxide-semiconductor field-effect-transistor-structured Si field emitter tip

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 7 PART A, 1996, Pages

  Hirano, Takayuki ^a,b   Kanemaru, Seigo ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

Cathode; Electron emission; Field emitter; MOSFET; Silicon emitter; Transistor; Vacuum microelectronics

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; ELECTRON EMISSION; GATES (TRANSISTOR); ION IMPLANTATION; MICROELECTRONICS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; VACUUM TECHNOLOGY;

CURRENT CONTROLLABLE SILICON FIELD EMITTER TIP; DRAIN CURRENT; DRAIN REGION; EXTRACTION ELECTRODE; GATE VOLTAGE; VACUUM MICROELECTRONICS;

ELECTRON TUBES;

EID: 0030196260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l861     Document Type: Article

References (9)

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