Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2311-2313

  Martens, L ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

ALTERNATIVE FREQUENCY WEIGHTING FUNCTION; FREQUENCY DISPERSION EFFECTS; ROOT MODELS;

MESFET DEVICES;

EID: 0031342398     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644663     Document Type: Article

References (10)

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