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Volumn 13, Issue 1, 1992, Pages 61-63

Floating Gates for Avalanche Suppression in MESFET's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS;

EID: 0026743469     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144952     Document Type: Article
Times cited : (10)

References (15)
  • 1
    • 0017982603 scopus 로고
    • Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure
    • T. Furutsuka, T. Tsuji, and F. Hasegawa, “Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure,” IEEE Trans. Electron Devices, vol. ED-25, pp. 563–567, 1978.
    • (1978) IEEE Trans. Electron Devices , vol.25 ED , pp. 563-567
    • Furutsuka, T.1    Tsuji, T.2    Hasegawa, F.3
  • 3
    • 0019606256 scopus 로고
    • Power-limiting breakdown effects in GaAs MESFET's
    • W.R. Frensley, “Power-limiting breakdown effects in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-28, pp. 962–970, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.28 ED , pp. 962-970
    • Frensley, W.R.1
  • 4
    • 0020195008 scopus 로고
    • Gate-drain avalanche breakdown in GaAs power MESFET's
    • J.P.R. David, J.E. Sitch, and M.S. Stern, “Gate-drain avalanche breakdown in GaAs power MESFET's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1548–1552, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.29 ED , pp. 1548-1552
    • David, J.P.R.1    Sitch, J.E.2    Stern, M.S.3
  • 5
    • 0020706514 scopus 로고
    • Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's
    • R. Wroblewski, G. Salmer, and Y. Crosnier, “Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 154–159, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.30 ED , pp. 154-159
    • Wroblewski, R.1    Salmer, G.2    Crosnier, Y.3
  • 6
    • 0022024919 scopus 로고
    • Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface charge
    • T.M. Barton and P.H. Ladbrooke, “Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface charge,” IEEE Electron Device Lett., vol. EDL-6, pp. 117–119, 1985.
    • (1985) IEEE Electron Device Lett. , vol.6 EDL , pp. 117-119
    • Barton, T.M.1    Ladbrooke, P.H.2
  • 7
    • 0024107421 scopus 로고
    • Drain avalanche breakdown in gallium arsenide MESFET's
    • Y. Wada and M. Tomizawa, “Drain avalanche breakdown in gallium arsenide MESFET's,” IEEE Trans. Electron Devices, vol. 35, pp. 1765–1770, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1765-1770
    • Wada, Y.1    Tomizawa, M.2
  • 8
    • 5244243205 scopus 로고
    • Fabrication and performance of GaAs MESFET's with graded channel doping using focused ion-beam implantation
    • A.F. Evason, J.R.A. Cleaver, and H. Ahmed, “Fabrication and performance of GaAs MESFET's with graded channel doping using focused ion-beam implantation,” IEEE Electron Device Lett., vol. 9, pp. 281–283, 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 281-283
    • Evason, A.F.1    Cleaver, J.R.A.2    Ahmed, H.3
  • 9
    • 0025483140 scopus 로고
    • Optimization of the doping profile in Si permeable base transistors for high-frequency, high-voltage operation
    • D.D. Rathman, “Optimization of the doping profile in Si permeable base transistors for high-frequency, high-voltage operation,” IEEE Trans. Electron Devices, vol. 37, pp. 2090–2098, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2090-2098
    • Rathman, D.D.1
  • 10
    • 36549090945 scopus 로고
    • Novel high voltage transistor fabricated using the in situ junctions in a Si-TaSi2 eutectic composite
    • B.M. Ditchek, T.R. Middleton, P.G. Rossoni, and B.G. Yacobi, “Novel high voltage transistor fabricated using the in situ junctions in a Si-TaSi2 eutectic composite,” Appl. Phys. Lett., vol. 52, pp. 1147–1149, 1988.
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 1147-1149
    • Ditchek, B.M.1    Middleton, T.R.2    Rossoni, P.G.3    Yacobi, B.G.4
  • 12
    • 36449009733 scopus 로고
    • Floating junction effects in semiconductor-metal eutectic transistors
    • P.G. Rossoni, M. Levinson, and B.M. Ditchek, “Floating junction effects in semiconductor-metal eutectic transistors,” J. Appl. Phys., vol, 70, pp. 2861–2865, 1991.
    • (1991) J. Appl. Phys. , vol.70 , pp. 2861-2865
    • Rossoni, P.G.1    Levinson, M.2    Ditchek, B.M.3
  • 13
    • 84941548087 scopus 로고    scopus 로고
    • Stanford Univ., Stanford, CA.
    • PISCES-IIB, Stanford Electron. Labs., Stanford Univ., Stanford, CA.
    • Stanford Electron. Labs.
  • 14
    • 0015673363 scopus 로고
    • Electron and hole ionization rates in epitaxial silicon at high electric fields
    • W.N. Grant, “Electron and hole ionization rates in epitaxial silicon at high electric fields,” SolidState Electron., vol. 16, pp. 1189–1203, 1973.
    • (1973) SolidState Electron. , vol.16 , pp. 1189-1203
    • Grant, W.N.1
  • 15
    • 0024681117 scopus 로고
    • An analysis of the dynamic behavior of field-limiting ring-passivation systems
    • M.K. Johnson, A.D. Annis, J.N. Sandoe, and D. Coe, “An analysis of the dynamic behavior of field-limiting ring-passivation systems,” IEEE Trans. Electron Devices, vol. 36, pp. 1203–1211, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1203-1211
    • Johnson, M.K.1    Annis, A.D.2    Sandoe, J.N.3    Coe, D.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.