An Improved GaAs MESFET Equivalent Circuit Model for Analog Integrated Circuit Applications

IEEE Journal of Solid-State Circuits

Volumn 22, Issue 4, 1987, Pages 567-574

  Larson, Lawrence E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS - EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, FIELD EFFECT; TRANSISTORS, FIELD EFFECT;

ANALOG INTEGRATED CIRCUITS; MESFET EQUIVALENT CIRCUIT MODEL;

INTEGRATED CIRCUITS, LINEAR;

EID: 0023401685     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1987.1052774     Document Type: Article

References (28)

1. S. J. Harrold and D. Haigh, “A GaAs switched-capacitor bandpass filter IC,” in Proc. 1985 IEEE GaAs IC Symp., Nov. 1985, pp. 23–26.
2. F. Goodenough, “First GaAs op amp hits 150MHz at unity gain,” Electron. Des., pp. 61–64, Mar. 20, 1986.
3. R. Conilogue, “A large and small signal charge storage model for an enhancement mode M.O.S. field effect transistor,” Ph.D. dissertation, Univ. of Calif., Los Angeles, 1983.
4. W. Shockley, “A unipolar field-effect transistor,” Proc. IRE, vol. 40, pp. 1365-1383, 1952.
5. R. R. Bockemuehl, “Analysis of field effect transistors with arbitrary charge distribution,” IEEE Trans. Electron Devices, vol. ED-10, pp. 31–48, 1963.
6. C. A. Liechti, “Microwave field-effect transistors—1976,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 279–295, 1976.
7. A. M. Grebene and P. D. Gandhi, “General theory for pinched operation of the junction-gate FET,” Solid-State Electron., vol. 12, pp. 573–589, 1969.
8. R. E. Neidert and C. J. Scott, “Computer program for microwave MESFET modelling,” Naval Research Lab., Washington, DC, Rep. WRL 8561, Feb. 1982.
9. M. S. Shur and L. F. Eastman, " I-V characteristics of GaAs MESFET with nonuniform doping profile,” IEEE Trans. Electron Devices, vol. ED-27, pp. 455–461, Feb. 1980.
10. H. Schichmann and D. Hodges, “Modeling and simulation of insulated-gate field-effect transistor switching circuits,” IEEE J. Solid-State Circuits, vol. SC-3, pp. 285–289, Sept. 1968.
11. W. Curtice, “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448–456, May 1980.
12. T. Kacprzak, “Compact dc model of GaAs FET's for large-signal computer calculation,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 211–213, Apr. 1983.
13. D. Snyder, private communication, 1985.
14. R. E. Lundgren, private communication, 1984.
15. L. E. Larson, G. C. Temes, and S. Law, “Comparison of amplifier gain enhancement techniques for GaAs MESFET analogue integrated circuits,” Electron. Lett., vol. 22, no. 21, pp. 1138–1139, Oct. 1986.
16. T. Chen and M. Shur, “A capacitance model for GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-12, no. 5, pp. 883–891, May 1985.
17. E. Wasserstrom and J. Mckenna, “The potential due to a charged metallic strip on a semiconductor surface,” Bell Syst. Tech. J., vol. 49, pp. 853–877, 1970.
18. L. E. Larson, “GaAs switched-capacitor circuits,” Ph.D. dissertation, Univ. of Calif., Los Angeles, 1987.
19. A. F. Franz, G. A. Franz, and S. Selberherr, “BAMBI—A design tool for power MOSFETs,” in Proc. ICCAD (Santa Clara, CA), 1984, pp. 179–181.
20. D. E. Ward, “Charge-based modeling of capacitances in MOS transistors,” Integrated Circuits Lab., Stanford Univ., Stanford, CA., Tech. Rep. G201-11, June 1981.
21. D. Matthews, private communications, 1986.
22. P. Yang, B. D. Epler, and P. K. Chatteijee, “An investigation of the charge conservation problem for MOSFET circuit simulation,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 128–138, Feb. 1983.
23. Y. Tsividis and G. Masetti, “Problems in precision modeling of the MOS transistor for analog applications,” IEEE Trans. Computer-Aided Des., vol. CAD-3, pp. 72–79, Jan. 1984.
24. C. Camacho-Penalosa, “Modelling frequency dependence of output impedance of a microwave MESFET at low-frequencies,” Electron. Lett., vol. 21, pp. 528–529, 1985.
25. S. Long, private communications, 1984.
26. S. Makram-Ebeid, A. Mittoneau, and G. Laurence, “Low frequency anomalies in GaAs MESFET structures,” in Proc. Int. Symp. GaAs and Related Compounds, 1982, pp. 336–343.
27. S. R. Hofstein and F. P. Heiman, “The silicon insulated-gate field effect transistor,” Proc. IEEE, vol. 51, pp. 1190–1203, Sept. 1963.
28. L. E. Larson, K. W. Martin, and G. C. Temes, “GaAs switched-capacitor circuits for video signal processing,” to be published in Proc. 1987 Int. Solid-State Circuits Conf., Feb. 1987.