Origin and Modeling of the Frequency Dependent Output Conductance in Microwave GaAs MESFET’s With Buried p Layer

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1725-1733

  Das, Mukunda B ^b  

^a Advanced Technology Materials Inc   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; BIPOLAR TRANSISTORS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MICROWAVES; MIXER CIRCUITS; OSCILLATORS (ELECTRONIC); POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

CHANNEL SUBSTRATE INTERFACE; FREQUENCY DEPENDENT OUTPUT CONDUCTANCE; GALLIUM ARSENIDE MICROWAVE MESFET;

MESFET DEVICES;

EID: 0028516775     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324580     Document Type: Article

References (14)

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