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Volumn 24, Issue 4, 1989, Pages 962-968

Gigahertz-Band High-Gain GaAs Monolithic Amplifiers Using Parallel Feedback Technique

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, FEEDBACK--DESIGN; INTEGRATED CIRCUITS, MONOLITHIC--DESIGN; SEMICONDUCTOR DEVICES, FIELD EFFECT--FABRICATION; TELECOMMUNICATION LINKS, SATELLITE--AMPLIFICATION;

EID: 0024716877     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.34078     Document Type: Article
Times cited : (9)

References (11)
  • 1
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    • MMIC’s for KA-band multibeam satellite transponder
    • H. Kato and K. Araki, “MMIC’s for KA-band multibeam satellite transponder. “in Proc. GLOBCOM’87, 1987, pp. 947–951.
    • (1987) Proc. GLOBCOM’87 , pp. 947-951
    • Kato, H.1    Araki, K.2
  • 2
    • 0021635766 scopus 로고
    • Gigaherz transresistance amplifiers in fine line NMOS
    • Dec.
    • A. A. Abidi, “Gigaherz transresistance amplifiers in fine line NMOS,” IEEE J. Solid-State Circuits, vol. SC-19, no. 6, pp. 986–994, Dec. 1984.
    • (1984) IEEE J. Solid-State Circuits , vol.SC-19 , Issue.6 , pp. 986-994
    • Abidi, A.A.1
  • 3
    • 0022736343 scopus 로고
    • A design and packaging technique for a high-gain, gigahertz-band single-chip amplifier
    • June
    • Y. Akazawa, N. Ishihara, T. Wakimoto, K. Kawarada, and S. Konaka, “A design and packaging technique for a high-gain, gigahertz-band single-chip amplifier,” IEEE J. Solid-State Circuits, vol. SC-21, no. 3. pp. 417–423, June 1986.
    • (1986) IEEE J. Solid-State Circuits , vol.SC-21 , Issue.3 , pp. 417-423
    • Akazawa, Y.1    Ishihara, N.2    Wakimoto, T.3    Kawarada, K.4    Konaka, S.5
  • 4
    • 84941459684 scopus 로고    scopus 로고
    • High performance short channel MESFETs with WSiN gate suppressing As-outdiffusion (SAINT-GEN. II)
    • presented at die 46th Device Res. Conf., Univ. of Colorado, Boulder, VA2
    • M. Tokumitu, K. Onodera, and K. Asai, “High performance short channel MESFETs with WSiN gate suppressing As-outdiffusion (SAINT-GEN. II).” presented at die 46th Device Res. Conf., Univ. of Colorado, Boulder, VA2, 1988.
    • Tokumitu, M.1    Onodera, K.2    Asai, K.3
  • 5
    • 0023531839 scopus 로고
    • Buried-channel GaAs MESFETs with improved small-signal characteristics
    • P. C. Canfield, D. J. Allstot, J. Medinger, and L. Forbes, “Buried-channel GaAs MESFETs with improved small-signal characteristics,” in Proc. GaAs IC Symp., 1987, pp. 163–166.
    • (1987) Proc. GaAs IC Symp. , pp. 163-166
    • Canfield, P.C.1    Allstot, D.J.2    Medinger, J.3    Forbes, L.4
  • 6
    • 0001226170 scopus 로고
    • Surface influence on the conductance DLTS spectra of GaAs MESFET's
    • Oct.
    • S. R. Bright, R. H. Wallis, and H. Thomas, “Surface influence on the conductance DLTS spectra of GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1447–1453, Oct. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.10 , pp. 1447-1453
    • Bright, S.R.1    Wallis, R.H.2    Thomas, H.3
  • 7
    • 0022419981 scopus 로고
    • Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies
    • C. Camacho-Penalosa and C. S. Aitchison, “Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies,” Electron. Lett., vol. 21, no. 12, pp. 528–529, 1985.
    • (1985) Electron. Lett. , vol.21 , Issue.12 , pp. 528-529
    • Camacho-Penalosa, C.1    Aitchison, C.S.2
  • 8
    • 0023401685 scopus 로고
    • An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications
    • Aug.
    • L. E. Larson, “An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications,” IEEE J. Solid-Stale Circuits, vol. SC22, no. 4, pp. 567–574, Aug. 1987.
    • (1987) IEEE J. Solid-Stale Circuits , vol.SC22 , Issue.4 , pp. 567-574
    • Larson, L.E.1
  • 9
    • 0021407839 scopus 로고
    • Modeling of backgating effects on GaAs digital integrated circuits
    • Apr.
    • S. J. Lee, C. P. Lee, E. Shen, and G. R. Kaelin, “Modeling of backgating effects on GaAs digital integrated circuits,” IEEE J. Solid-State Circuits, vol. SC-19, no. 2, pp. 245–250, Apr. 1984.
    • (1984) IEEE J. Solid-State Circuits , vol.SC-19 , Issue.2 , pp. 245-250
    • Lee, S.J.1    Lee, C.P.2    Shen, E.3    Kaelin, G.R.4
  • 10
    • 0022891059 scopus 로고
    • 4-GHz band GaAs monolithic limiting amplifier
    • Dec.
    • T. Wakimoto, Y. Akazawa, and K. Kawarada, “4-GHz band GaAs monolithic limiting amplifier,” IEEE J. Solid-State Circuits, vol. SC-21, no. 6, pp. 1103–1108, Dec. 1986.
    • (1986) IEEE J. Solid-State Circuits , vol.SC-21 , Issue.6 , pp. 1103-1108
    • Wakimoto, T.1    Akazawa, Y.2    Kawarada, K.3
  • 11
    • 0019569028 scopus 로고
    • A functional GaAs FET noise model
    • May
    • A. F. Podell, “A functional GaAs FET noise model,” IEEE Trans. Electron Devices, vol. ED-28, no. 5, pp. 511–517, May 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.5 , pp. 511-517
    • Podell, A.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.