A Low-Frequency GaAs MESFET Circuit Model

IEEE Journal of Solid-State Circuits

Volumn 23, Issue 2, 1988, Pages 605-608

  Scheinberg, Norman ^a   Bayruns, Robert ^a   Goyal, Ravender ^a  

^a Anadigics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

FOUR-TERMINAL MODEL; GALLIUM ARSENIDE MESFET; LOW FREQUENCY ANOMALIES;

TRANSISTORS, FIELD EFFECT;

EID: 0023999560     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.1029     Document Type: Article

References (8)

1. N. Scheinberg, “Designing highspeed operational amplifiers with GaAs MESFETS,” presented at the IEEE Int. Symp. Circuits and Systems, Philadelphia, PA, May 4-7, 1987.
2. T. Ducourant, “3 GHz, ISOmv, 4 bit GaAs analogus to digital converter,” in Proc. GaAs IC Symp., 1986, pp. 209–212.
3. S. Makram-Ebeid, “The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits,” IEEE Trans. Electron Devices, vol. ED-32, pp. 632–642, Mar. 1985.
4. M. Smith, “ RF nonlinear device characterization yields improved modeling accuracy,” in Int. Microwave Symp. Dig., June 1986, pp. 381–384.
5. C. Camacho-Penalosa, “Modeling frequency dependence of output impedance of a microwave MESFET at low frequencies,” Electron. Lett., pp. 528–529, June 1985.
6. W. R. Curtice, “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448–456, 1980.
7. M. Das, “highfrequency network properties of MOS transistors including the substrate resistivity effects,” IEEE Trans. Electron Devices, vol. ED-16, pp. 1049–1069, Dec. 1969.
8. R. Bayruns and N. Scheinberg, unpublished data, Anadigics, Warren, NJ.