The Classical Versus the Quantum Mechanical Model of Mobility Degradation Due to the Gate Field in MOSFET Inversion Layers

IEEE Transactions on Electron Devices

Volumn 32, Issue 3, 1985, Pages 700-710

  Lin, Mou Shiung ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - SCATTERING; MATHEMATICAL MODELS;

BULK SCATTERING; MOBILITY DEGRADATION; MOSFET INVERSION LAYERS; QUANTUM MECHANICAL MODEL; SURFACE SCATTERING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022025576     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22001     Document Type: Article

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