Analysis of nonlinearities in MOS floating resistor networks

IEE Proceedings: Circuits, Devices and Systems

Volumn 141, Issue 2, 1994, Pages 82-88

  Wilson, G ^a   Chan, P K ^a  

^a UNIVERSITY OF PLYMOUTH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC DISTORTION; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; SECOND HARMONIC GENERATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

DRAIN CURRENT MODEL; MOBILITY DEGRADATION EFFECTS; MOS FLOATING RESISTOR NETWORKS;

MOS DEVICES;

EID: 0028419635     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19949837     Document Type: Article

References (16)